Atmospheric Pressure Chemical Vapor Deposition Growth of Uniform, Monolayer Graphene by Improving the Texture of Copper Foil

Graphene ◽  
2014 ◽  
Vol 2 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Ali Mohsin ◽  
Ahmad Umair
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Copper Foil ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Chemical Vapor Deposition Growth ◽  
Pressure Chemical

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Edge controlled growth of hexagonal boron nitride crystals on copper foil by atmospheric pressure chemical vapor deposition

CrystEngComm ◽  
2018 ◽  
Vol 20 (5) ◽  
pp. 550-555 ◽  
Author(s):  
Kamal Prasad Sharma ◽  
Subash Sharma ◽  
Aliza Khaniya Sharma ◽  
Balaram Paudel Jaisi ◽  
Golap Kalita ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Chemical Vapor Deposition ◽  
Crystal Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Copper Foil ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Precursor Supply

We report on a precursor supply technique controlled h-BN crystal growth over the catalytic activity of Cu by APCVD.

scholarly journals Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets

RSC Advances ◽  
2021 ◽  
Vol 11 (58) ◽  
pp. 36483-36493
Author(s):  
Ayrton Sierra-Castillo ◽  
Emile Haye ◽  
Selene Acosta ◽  
Raul Arenal ◽  
Carla Bittencourt ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Cvd Method ◽  
Pressure Chemical ◽  
Vertically Aligned

SnS2 and SnSe2 nanosheets were synthesized vertically aligned in different substrates by an AP-CVD method.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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