Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

2016 ◽  
Vol 4 (8) ◽  
pp. 2909-2918 ◽  
Author(s):  
Ann L. Greenaway ◽  
Allison L. Davis ◽  
Jason W. Boucher ◽  
Andrew J. Ritenour ◽  
Shaul Aloni ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Low Cost ◽  
Vapor Transport ◽  
Mixed Powder ◽  
Gallium Arsenide Phosphide

Close-spaced vapor transport provides GaAs1−xPx with controlled composition and competitive electronic properties.

scholarly journals Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

2018 ◽  
Vol 1 (2) ◽  
pp. 284-289 ◽  
Author(s):  
Ann L. Greenaway ◽  
Benjamin F. Bachman ◽  
Jason W. Boucher ◽  
Christopher J. Funch ◽  
Shaul Aloni ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Water Vapor ◽  
Indium Phosphide ◽  
Gallium Indium Phosphide ◽  
Vapor Transport

scholarly journals Low-cost growth of III–V layers on si using close-spaced vapor transport

2015 ◽  
Author(s):  
Jason W. Boucher ◽  
Ann L. Greenaway ◽  
Andrew J. Ritenour ◽  
Allison L. Davis ◽  
Benjamin F. Bachman ◽  
...  
Keyword(s):  
Low Cost ◽  
Vapor Transport ◽  
Cost Growth

Preparation and thermolysis of a single-source precursor to gallium arsenide phosphide

1995 ◽  
Vol 1 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Steven R. Aubuchon ◽  
Michael S. Lube ◽  
Richard L. Wells
Keyword(s):  
Gallium Arsenide ◽  
Single Source ◽  
Gallium Arsenide Phosphide ◽  
Single Source Precursor

Structural and Electronic Properties of (CdTe)1−x(In2Te3)x Films Grown by Close-spaced vapor Transport Combined with Free Evaporation

2000 ◽  
Vol 15 (8) ◽  
pp. 1811-1815 ◽  
Author(s):  
M. Zapata-Torres ◽  
Y. P. Mascarenhas ◽  
M. A. Santana-Aranda ◽  
J. Luyo-Alvarado ◽  
M. Melé-Lirandez ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Phase ◽  
Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
Transmission Measurements

The structural and electronic properties of (CdTe)1−x(In2Te3)x thin films as a function of substrate temperature were studied using x-ray diffraction, energy dispersive x-ray analysis, and Raman, transmission, and modulated transmission spectroscopies. The films were grown by the close-spaced vapor transport technique combined with free evaporation; CdTe and In2Te3 were used as sources. From x-ray diffraction the presence of mixed phases and differences in composition were detected, and good correlation with Raman spectroscopy was found. Transmission spectroscopy suggested the possibility of a modulation of the band gap of the alloy from a value as low as 0.5 eV up to 1.5 eV. Single-phase films presented a direct band gap of around 1.15 eV, as obtained from modulated transmission measurements.

Gallium arsenide field‐effect transistor by close spaced vapor transport epitaxy

1987 ◽  
Vol 51 (24) ◽  
pp. 2004-2006 ◽  
Author(s):  
J. Mimila‐Arroyo ◽  
R. Castanedo ◽  
F. Chávez ◽  
R. González ◽  
G. Navarro ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vapor Transport ◽  
Effect Transistor
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