Silicon quantum dot sensors for an explosive taggant, 2,3-dimethyl-2,3-dinitrobutane (DMNB)

2016 ◽  
Vol 52 (53) ◽  
pp. 8207-8210 ◽  
Author(s):  
Jin Soo Kim ◽  
Bomin Cho ◽  
Soo Gyeong Cho ◽  
Honglae Sohn

Conduction band edge dependent photoluminescence (PL) quenching by electron transfer was observed. PL from silicon quantum dots (Si QDs) was quenched by 2,3-dimethyl-2,3-dinitrobutane (DMNB), however PL from cadmium selenide (CdSe QDs) was not quenched by DMNB.

2016 ◽  
Vol 52 (16) ◽  
pp. 3324-3327 ◽  
Author(s):  
Yonghua Yao ◽  
Xia Huang

Here, by using an electrochemical strategy, we demonstrated that ferrous ions are capable of regulating the bacterial EET process in a certain potential range where the conduction-band edge of natural abundant iron(iii) oxides is located.


2020 ◽  
Vol 128 (8) ◽  
pp. 1197
Author(s):  
E.P. Kolesova ◽  
F.M. Safin ◽  
V.G. Maslov ◽  
A. Dubavik ◽  
Y.K. Gun'ko ◽  
...  

The efficiency of the electron transfer in hybrid structures based on quantum dots of different architectures was studied. Electron transfer efficiency was estimated by two independent methods from the side of the electron donor (quantum dot) and acceptor (Titania nanoparticles). Structures based on core CdSe QDs with small diameter demonstrate the highest efficiency of electron transfer and ROS generation. The presence of the dark fraction of QDs in the ensemble reduces the functionality of hybrid structures and limits their practical applicability.


2012 ◽  
Vol 101 (19) ◽  
pp. 193104 ◽  
Author(s):  
Joshua T. Wright ◽  
Robert W. Meulenberg

2016 ◽  
Vol 18 (30) ◽  
pp. 20466-20475 ◽  
Author(s):  
Saurabh Chauhan ◽  
David F. Watson

CdSe QDs transfer electrons from band-edge and surface states to TiO2; core/shell CdSe/ZnS QDs transfer electrons exclusively from band-edge states.


RSC Advances ◽  
2015 ◽  
Vol 5 (39) ◽  
pp. 30981-30988 ◽  
Author(s):  
Jie Hua ◽  
Haibo Cheng ◽  
Xi Yuan ◽  
Yan Zhang ◽  
Mei Liu ◽  
...  

The photoluminescence (PL) quenching of CuInS2/ZnS quantum dots (QDs) in blend films with FePt magnetic nanoparticles (MNs) was studied by steady-state and time-resolved PL spectroscopy.


2016 ◽  
Vol 52 (36) ◽  
pp. 6185-6188 ◽  
Author(s):  
Takafumi Suzuki ◽  
Hiroto Watanabe ◽  
Yuya Oaki ◽  
Hiroaki Imai

The conduction band edge (CBE) of WO3 quantum dots (QDs) was determined experimentally and engineered by size control to around one nanometer.


Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.


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