A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility
2016 ◽
Vol 18
(44)
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pp. 30379-30384
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Keyword(s):
Band Gap
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A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.