IZrP: Two-dimensional Narrow Band Gap Semiconductor with High Stability, Anisotropic Electronic Properties and High Carrier Mobility

2021 ◽  
pp. 113458
Author(s):  
Cheng-gong Zhang ◽  
Wei-xiao Ji ◽  
Sheng-shi Li ◽  
Ping Li ◽  
Chang-wen Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Carrier Mobility ◽  
High Stability ◽  
Narrow Band ◽  
Two Dimensional ◽  
High Carrier Mobility ◽  
High Carrier

A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

2016 ◽  
Vol 18 (44) ◽  
pp. 30379-30384 ◽  
Author(s):  
Peng-Fei Liu ◽  
Liujiang Zhou ◽  
Thomas Frauenheim ◽  
Li-Ming Wu
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.

Novel two-dimensional semiconductor SnP3: high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations

2018 ◽  
Vol 6 (25) ◽  
pp. 11890-11897 ◽  
Author(s):  
Songsong Sun ◽  
Fanchen Meng ◽  
Hongyan Wang ◽  
Hui Wang ◽  
Yuxiang Ni
Keyword(s):  
First Principles ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
2D Material ◽  
High Carrier Mobility ◽  
High Carrier

A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

A novel two-dimensional δ-InP3 monolayer with high stability, tunable bandgap, high carrier mobility, and gas sensing of NO2

2019 ◽  
Vol 7 (24) ◽  
pp. 7352-7359 ◽  
Author(s):  
Wencai Yi ◽  
Xin Chen ◽  
Zhixiu Wang ◽  
Yingchun Ding ◽  
Bingchao Yang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Stability ◽  
Gas Sensing ◽  
Two Dimensional ◽  
Tunable Bandgap ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Sensing Performance

δ-InP3 monolayer possesses high electronic mobility and worthwhile sensing performance toward N-based gases (particularly NO2).

Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons

2020 ◽  
Vol 22 (48) ◽  
pp. 28414-28422
Author(s):  
Yunzhi Gao ◽  
Kai Wu ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Visible Light ◽  
Band Gap ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Visible Light Absorption ◽  
Heterojunction Solar Cells ◽  
High Carrier Mobility ◽  
High Carrier

Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability.

Tunable band gap and high carrier mobility in stanene by small organic molecule adsorption and external electric field

2021 ◽  
Author(s):  
Meixia Xiao ◽  
Xiao Shao ◽  
Hai Yang Song ◽  
Zhao Li ◽  
Minrong An ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
Carrier Mobility ◽  
Organic Molecule ◽  
Small Organic Molecule ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Tunable Band Gap

The effects of small organic molecule (SOM) adsorption with benzene (C6H6), hexafluorobenzene (C6F6), and p‒difluorobenzene (C6H4F2) on the electronic properties of stanene under the external electric field are investigated through...

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