Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition
The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated.
2017 ◽
Vol 56
(5)
◽
pp. 050304
◽
2020 ◽
Vol 38
(3)
◽
pp. 032405
Keyword(s):
Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition
2012 ◽
Vol 15
(4)
◽
pp. H88
◽
Keyword(s):
2020 ◽
Vol 38
(4)
◽
pp. 042405
Keyword(s):