Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

2012 ◽  
Vol 15 (4) ◽  
pp. H88 ◽  
Author(s):  
Ching-Shiang Peng ◽  
Wen-Yuan Chang ◽  
Yi-Hsuan Lee ◽  
Ming-Ho Lin ◽  
Frederick Chen ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (68) ◽  
pp. 63250-63255 ◽  
Author(s):  
Ming Xie ◽  
Tao Hu ◽  
Liu Yang ◽  
Yun Zhou

The electrochemical properties of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and a conformal Al2O3 coating by atomic layer deposition were studied in this paper.


2017 ◽  
Vol 56 (5) ◽  
pp. 050304 ◽  
Author(s):  
Jue Yu ◽  
Wei Huang ◽  
Chao Lu ◽  
Guangyang Lin ◽  
Cheng Li ◽  
...  

Author(s):  
Obed Yamín Ramírez-Esquivel ◽  
Dalia Alejandra Mazón-Montijo ◽  
Dagoberto Cabrera-German ◽  
Eduardo Martínez-Guerra ◽  
Zeuz Montiel-González

2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16704-16708 ◽  
Author(s):  
Masoud Akbari ◽  
Min-Kyu Kim ◽  
Dongshin Kim ◽  
Jang-Sik Lee

The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated.


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