scholarly journals New garnet structure phosphors, Lu3−xYxMgAl3SiO12:Ce3+ (x = 0–3), developed by solid solution design

2016 ◽  
Vol 4 (12) ◽  
pp. 2359-2366 ◽  
Author(s):  
Haipeng Ji ◽  
Le Wang ◽  
Maxim S. Molokeev ◽  
Naoto Hirosaki ◽  
Zhaohui Huang ◽  
...  
Keyword(s):  
Solid Solution ◽  
Crystal Structures ◽  
Photoluminescence Properties ◽  
Garnet Structure ◽  
Yellow Light ◽  
Light Emitting ◽  
Solution Design

(Lu,Y)MgAl3SiO12:Ce3+ yellow light emitting phosphors are developed by solid solution design and their crystal structures and photoluminescence properties are identified.

Efficient and controllable photoluminescence in novel solid solution Ca1−xSrxHf4(PO4)6:Eu2+ phosphors with high thermal stability for white light emitting diodes

CrystEngComm ◽  
2018 ◽  
Vol 20 (31) ◽  
pp. 4383-4394 ◽  
Author(s):  
Shuangyu Xin ◽  
Miao Gao ◽  
Chuang Wang ◽  
Xuejiao Wang ◽  
Ge Zhu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solid Solution ◽  
Quantum Efficiency ◽  
White Light ◽  
Light Emitting Diodes ◽  
High Thermal Stability ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
White Light Emitting Diodes

The tunable photoluminescence properties of (Ca,Sr)Hf4(PO4)6:Eu2+ solid solution phosphors with high thermal stability and quantum efficiency were investigated.

Syntheses, crystal structures and photoluminescence properties of Ca9Y(PO4)5(SiO4)F1.5O0.25:Ln3+ (Ln3+ = Eu3+/Tb3+/Dy3+/Sm3+) phosphors for near-UV white LEDs

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92371-92377 ◽  
Author(s):  
Man Liu ◽  
Wei Lü ◽  
Jiansheng Huo ◽  
Baiqi Shao ◽  
Yang Feng ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Red Light ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
White Leds ◽  
Red Led

We report red light-emitting Ca9Y(PO4)5(SiO4)F1.5O0.25:Eu3+/Sm3+ phosphors for the fabrication of red LED devices.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Photoluminescence properties of Eu3+ doped ZrO2 with different morphologies and crystal structures

2021 ◽  
Vol 864 ◽  
pp. 158781
Author(s):  
Dongxin Liu ◽  
Mingli Wang ◽  
Liyuan Gong ◽  
Jianling Zhao ◽  
Miao Zhu ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Photoluminescence Properties

The Emission Property of Phosphors LEDs Based on ZnCuInS/ZnSe/ZnS Quantum Dots

2014 ◽  
Vol 989-994 ◽  
pp. 623-625
Author(s):  
Ke Bi ◽  
Wen Yan Liu ◽  
Tian Yue Xu ◽  
Tie Qiang Zhang ◽  
Yu Zhang
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectrum ◽  
Stokes Shift ◽  
Core Shell ◽  
Photoluminescence Properties ◽  
Red Emission ◽  
Light Emitting ◽  
Quantum Size ◽  
Gan Led ◽  
Photoluminescence Peak

.In this research, ZnCuInS/ZnSe/ZnS quantum dots (QDs) have been studied as an excellent red emitting source for blue GaN LED because of its non-toxic deep red emmission, and large Stokes shift properties. In the paper ZnCuInS/ZnSe/ZnS core/shell quantum dots were prepared with the particle size of 4.5nm. According to the measurement of photoluminescence spectrum emitted by ZnCuInS/ZnSe/ZnS core/shell quantum dots, the emitting peak of 700 nm and the full was achieved as red emitter.It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.Meanwhile, we were prepared ZnCuInS/ZnSe/ZnS core/shell quantum dot light emitting diodes and their photoluminescence properties were studied. After the suitable bias was applied on the films, increasing the ZnCuInS/ZnSe/ZnS QDs concentration in the blue GaN chips, red emission increased with decreasing LED’s blue light.

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