Study of the Hydrolytic Stability of Fine-Grained Ceramics Based on Y2.5Nd0.5Al5O12 Oxide with a Garnet Structure under Hydrothermal Conditions

The hydrolytic stability of ceramics based on Y2.5Nd0.5Al5O12 oxide with a garnet structure obtained by the spark plasma sintering (SPS) method has been studied. The tests were carried out in distilled water under hydrothermal conditions in an autoclave and, for comparison, in a static mode at room temperature. The mechanism of leaching of Y and Nd from the ceramics was investigated. It has been shown that at “low” temperatures (25 and 100 °C), the destruction of pores occured, and the intensity of the leaching process was limited by the diffusion of ions from the inner part of the sample to the surface. At “high” test temperatures (200 and 300 °C), intense destruction of the ceramic grain boundaries was observed. It was assumed that the accelerated leaching of neodymium is due to the formation of grain-boundary segregations of Nd3+ in sintered ceramics.

Red-tunable LuAG garnet phosphors via Eu3+→Mn4+ energy transfer for optical thermometry sensor application

The Eu3+→Mn4+ energy transfer strategy is designed in the Lu3Al5O12 garnet structure to achieve color-adjustable narrow emission from orangish-red to deep-red light and remarkable thermal quenching improvement for optical thermometry sensors.

Отрицательное магнитосопротивление в структуре n-InSb/ЖИГ

It is shown that for the n-InSb/YIG/GGG (YIG - yttrium iron garnet, GGG - gallium-gadolinium garnet) structure in the tangent to the substrate plane geometry of magnetization (H <10 kOe) at a temperature T≈300 K the magnetoresistance of about 1% is negative, while for n-InSb/GGG structure, in the same magnetization geometry, the magnetoresistance is positive (an increase in electrical resistance in a magnetic field). The negative magnetoresistance effect in the InSb/YIG/GGG structure is due to the influence of the YIG magnetization on the conduction electrons of InSb (proximity effect) and the magnitude of the effect is determined by the value of YIG magnetization and parameters of InSb films.