The Emission Property of Phosphors LEDs Based on ZnCuInS/ZnSe/ZnS Quantum Dots

2014 ◽  
Vol 989-994 ◽  
pp. 623-625
Author(s):  
Ke Bi ◽  
Wen Yan Liu ◽  
Tian Yue Xu ◽  
Tie Qiang Zhang ◽  
Yu Zhang
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectrum ◽  
Stokes Shift ◽  
Core Shell ◽  
Photoluminescence Properties ◽  
Red Emission ◽  
Light Emitting ◽  
Quantum Size ◽  
Gan Led ◽  
Photoluminescence Peak

.In this research, ZnCuInS/ZnSe/ZnS quantum dots (QDs) have been studied as an excellent red emitting source for blue GaN LED because of its non-toxic deep red emmission, and large Stokes shift properties. In the paper ZnCuInS/ZnSe/ZnS core/shell quantum dots were prepared with the particle size of 4.5nm. According to the measurement of photoluminescence spectrum emitted by ZnCuInS/ZnSe/ZnS core/shell quantum dots, the emitting peak of 700 nm and the full was achieved as red emitter.It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.Meanwhile, we were prepared ZnCuInS/ZnSe/ZnS core/shell quantum dot light emitting diodes and their photoluminescence properties were studied. After the suitable bias was applied on the films, increasing the ZnCuInS/ZnSe/ZnS QDs concentration in the blue GaN chips, red emission increased with decreasing LED’s blue light.

Photoluminescence properties study of the Au/Au2S nanoshell

2002 ◽  
Vol 80 (6) ◽  
pp. 707-711
Author(s):  
J J Diao ◽  
F S Qiu ◽  
G D Chen ◽  
C Xi ◽  
Y Song
Keyword(s):  
Size Effect ◽  
Quantum Size Effect ◽  
Experimental Results ◽  
Nanometer Scale ◽  
Core Shell ◽  
Photoluminescence Properties ◽  
The Core ◽  
Enhanced Photoluminescence ◽  
Quantum Size ◽  
Photoluminescence Peak

Photoluminescence experimental results of the Au/Au2S nanoshell (a nanometer-scale Au2S core coated by a thin Au shell) are presented in this note. An enhanced photoluminescence peak of Au coated Au2S is obtained near the blue–green region, compared with the photoluminescence region of bulk Au2S, which is near the orange–red region. The quantum-size effect and the core/shell nanostructure caused the blueshift photoluminescence of the Au2S/Au nanoshell. PACS Nos.: 81.05Ys, 78.55-m

Surface Organic Ligands-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetime

2021 ◽  
Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Ligands ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Light Emitting ◽  
Long Lifetime

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...

Photoluminescence properties of CdTe∕CdSe core-shell type-II quantum dots

2006 ◽  
Vol 99 (12) ◽  
pp. 123521 ◽  
Author(s):  
C. H. Wang ◽  
T. T. Chen ◽  
K. W. Tan ◽  
Y. F. Chen ◽  
C. T. Cheng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Type Ii ◽  
Photoluminescence Properties ◽  
Cdse Core ◽  
Shell Type

scholarly journals Quantum Dots and Applications

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Photovoltaic Cells ◽  
Core Shell ◽  
Special Issue ◽  
High Quality ◽  
Light Emitting ◽  
Size Dependent

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

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