Understanding interface (odd–even) effects in charge tunneling using a polished EGaIn electrode

2018 ◽  
Vol 20 (7) ◽  
pp. 4864-4878 ◽  
Author(s):  
Jiahao Chen ◽  
Thomas J. Giroux ◽  
Yen Nguyen ◽  
Atte A. Kadoma ◽  
Boyce S. Chang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Electronic Devices ◽  
Large Area ◽  
Quantum Electronic ◽  
Tunneling Junctions ◽  
Charge Tunneling

Charge transport across large area molecular tunneling junctions is widely studied due to its potential in the development of quantum electronic devices.

Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

2015 ◽  
Vol 17 (21) ◽  
pp. 13804-13807 ◽  
Author(s):  
Gyu Don Kong ◽  
Miso Kim ◽  
Hyeon-Jae Jang ◽  
Kung-Ching Liao ◽  
Hyo Jae Yoon
Keyword(s):  
Charge Transport ◽  
Molecular Junctions ◽  
Large Area ◽  
Charge Tunneling

The role of halogenation in charge transport across molecular junctions was investigated.

Organic vapor phase deposition for the growth of large area organic electronic devices

2009 ◽  
Vol 95 (23) ◽  
pp. 233305 ◽  
Author(s):  
Richard R. Lunt ◽  
Brian E. Lassiter ◽  
Jay B. Benziger ◽  
Stephen R. Forrest
Keyword(s):  
Vapor Phase ◽  
Electronic Devices ◽  
Large Area ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition

scholarly journals Electrical conductivity and magnetic bistability in metal–organic frameworks and coordination polymers: charge transport and spin crossover at the nanoscale

2020 ◽  
Vol 49 (15) ◽  
pp. 5601-5638 ◽  
Author(s):  
Víctor Rubio-Giménez ◽  
Sergio Tatay ◽  
Carlos Martí-Gastaldo
Keyword(s):  
Electrical Conductivity ◽  
Charge Transport ◽  
Coordination Polymers ◽  
Spin Crossover ◽  
Electronic Devices ◽  
Metal Organic Frameworks ◽  
Active Components ◽  
Metal Organic

This review aims to reassess the progress, issues and opportunities in the path towards integrating conductive and magnetically bistable coordination polymers and metal–organic frameworks as active components in electronic devices.

scholarly journals Single molecule vs. large area design of molecular electronic devices incorporating an efficient 2-aminepyridine double anchoring group

Nanoscale ◽  
2019 ◽  
Vol 11 (34) ◽  
pp. 15871-15880 ◽  
Author(s):  
L. Herrer ◽  
A. Ismael ◽  
S. Martín ◽  
D. C. Milan ◽  
J. L. Serrano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Molecule ◽  
Electronic Devices ◽  
Large Area ◽  
Molecular Electronic ◽  
Single Molecule Level ◽  
Order Of Magnitude ◽  
Anchoring Group ◽  
Molecular Skeleton ◽  
Molecular Electronic Devices

The electrical properties of a bidentate molecule in both large area devices and at the single molecule level have been explored and exhibit a conductance one order of magnitude higher than that of monodentate materials with same molecular skeleton.

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

2012 ◽  
Vol 1433 ◽  
Author(s):  
A. Severino ◽  
M. Mauceri ◽  
R. Anzalone ◽  
A. Canino ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Low Cost ◽  
Electronic Devices ◽  
Young Modulus ◽  
Interesting Property ◽  
Large Area ◽  
Si Substrates ◽  
Application Fields ◽  
Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

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