Understanding the graphitization and growth of free-standing nanocrystalline graphene using in situ transmission electron microscopy

Nanoscale ◽  
2017 ◽  
Vol 9 (35) ◽  
pp. 12835-12842 ◽  
Author(s):  
C. N. Shyam Kumar ◽  
Venkata Sai Kiran Chakravadhanula ◽  
Adnan Riaz ◽  
Simone Dehm ◽  
Di Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Domain Growth ◽  
Free Standing ◽  
Tem Analysis ◽  
Thermally Induced ◽  
Transmission Electron

In situ TEM analysis of the thermally induced graphitization and domain growth of free-standing nanocrystalline graphene thin films.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Hydrogen Absorption of Palladium Thin Films Observed by in Situ Transmission Electron Microscopy with an Environmental Cell

2016 ◽  
Vol 8 (23) ◽  
pp. 14548-14551 ◽  
Author(s):  
Tengfei Zhang ◽  
Yuki Nakagawa ◽  
Takenobu Wakasugi ◽  
Shigehito Isobe ◽  
Yongming Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Hydrogen Absorption ◽  
Transmission Electron ◽  
Environmental Cell

An in Situ Transmission Electron Microscopy Study During NH3 Ambient Annealing of Cu-Cr Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Z. Atzmon ◽  
R. Sharma ◽  
J.W. Mayer ◽  
S.Q. Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Nitridation Process ◽  
Transmission Electron ◽  
Heat Treated

ABSTRACTNitridation of Cu-Cr alloy films under an NH3 ambient was studied using in situ transmission electron Microscopy. Cu-Cr thin films (40–100 nm) were deposited on a single crystal NaCl substrate by electron beam coevaporation, and were heat treated up to 750°C at 2.5–3.0 Torr NH3. The films were also vacuum (10-6 Torr) annealed under the same conditions for comparison. Initial observation of Cu and Cr crystallization occurred at 470°C for both environmental conditions. The nitridation process of Cr to form CrN was observed initially at 580°C and was followed by evolution of faceted Cu grain growth in the CrN Matrix.

Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Microstructures of Polysilicon

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
In Situ Heating ◽  
Phosphorus Doped ◽  
Microstructural Studies

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.

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