Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7077-7084 ◽  
Author(s):  
Guangqian Ding ◽  
Cong Wang ◽  
Guoying Gao ◽  
Kailun Yao ◽  
Chaochao Dun ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Room Temperature ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Two Dimensional ◽  
Thermoelectric Figure

Thermoelectric ZT of n-doped ZrSe2/HfSe2 SLM at room temperature.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

Thermoelectric Properties of CoSb3-based Skutterudite Compounds

2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Filling Ratio ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Alloy Scattering ◽  
Skutterudite Compound

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.

Thermoelectric Figure of Merit Calculations for Nanowires –The Moderate Confinement Regime

2010 ◽  
Vol 1267 ◽  
Author(s):  
Jane Cornett ◽  
Oded Rabin
Keyword(s):  
Indium Antimonide ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Wire Radius ◽  
Thermoelectric Figure ◽  
High Level ◽  
Case Basis ◽  
Strong Confinement

AbstractWe report room temperature ZT calculations for silicon and indium antimonide nanowires of varying radii. Interestingly, some systems deviate significantly from the anticipated trend of ZT vs. radius. The InSb results are particularly remarkable due to the non-monotonic relationship seen between n-type ZT and wire radius; where typically we expect to see only a decrease with increasing radius, for InSb ZT increases between 20 and 100 nm wire radii. This is thought to be due to the high level of degeneracy of subbands for larger nanowire radii. These results indicate that the monotonic relationship between ZT and wire radius observed under strong confinement conditions cannot be assumed, but must be tested on a case-by-case basis for each materials system.

Electrical Properties and Figures of Merit for New Chalcogenide-Based Thermoelectric Materials

1997 ◽  
Vol 478 ◽  
Author(s):  
Jon L. Schindler ◽  
Tim P. Hogan ◽  
Paul W. Brazis ◽  
Carl R. Kannewurf ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Figures Of Merit ◽  
Lattice Symmetry ◽  
Thermoelectric Refrigeration ◽  
Polychalcogenide Flux ◽  
P Type

AbstractNew Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Enhancement of Thermopower due to Deficiency of Sb in FeSb2

2013 ◽  
Vol 665 ◽  
pp. 179-181 ◽  
Author(s):  
Anup V. Sanchela ◽  
Varun Kushwaha ◽  
Ajay. D. Thakur ◽  
C.V. Tomy
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Low Temperatures ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Parent Compound ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Power Factor ◽  
Anomalous Peak

FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly enhanced thermoelectric figure of merit ZT ~ 0.0015 is achieved near room temperature. At low temperatures there is no improvement in ZT values due to the high thermal conductivity (phonon dominant region). Keywords: Seebeck coefficient, thermal conductivity, resistivity, thermoelectric figure of merit. PACS: 72.20.Pa, 71.27.+a, 71.28.+d

THERMOELECTRIC PROPERTIES OF n-TYPE Bi2Te3–Bi2Se3 ALLOYS

1967 ◽  
Vol 45 (11) ◽  
pp. 3611-3626 ◽  
Author(s):  
C. H. Champness ◽  
W. B. Muir ◽  
P. T. Chiang
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Composition Range ◽  
Energy Gap ◽  
Dopant Concentration ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Close Relationship

Room temperature measurements of the Seebeck coefficient (α), electrical conductivity (σ), thermal conductivity (κ), and thermoelectric figure of merit (Z) were made on samples of n-type Bi2Te3–Bi2Se3 pseudobinary alloys over the whole composition range. To obtain maximum Z, doping was carried out at each composition by the addition of CuBr (donor) from 0 to 66 mole% Bi2Se3 and by lead and excess Se (acceptors) thereafter. Experimentally determined values of the materials parameter β were found to saturate (β∞) at high conductivity in a given alloy and close relationship was found between β∞ and Zmax The optimized values of σ, κ, and CuBr-dopant concentration were found to show a maximum at 33 mole% Bi2Se3, while the optimized value of α showed a minimum at this composition. These results, together with the fact that no maximum was observed in σ at constant α (i.e., constant carrier concentration), suggest that a maximum in the carrier concentration occurs in optimized material at this composition. Further support for this was provided by the observed variation of σ with α at a given composition which was found to be more consistent with a minimum in the apparent energy gap near 33% Bi2Se3 rather than the maximum reported by other workers.

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