Exceptionally high open circuit thermoelectric figure of merit in two-dimensional Tin Sulphide

Author(s):  
Shagun Nag ◽  
Ranber Singh ◽  
Ranjan Kumar
Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7077-7084 ◽  
Author(s):  
Guangqian Ding ◽  
Cong Wang ◽  
Guoying Gao ◽  
Kailun Yao ◽  
Chaochao Dun ◽  
...  

Thermoelectric ZT of n-doped ZrSe2/HfSe2 SLM at room temperature.


2017 ◽  
Vol 19 (8) ◽  
pp. 5797-5805 ◽  
Author(s):  
Rui-Ning Wang ◽  
Guo-Yi Dong ◽  
Shu-Fang Wang ◽  
Guang-Sheng Fu ◽  
Jiang-Long Wang

A gate is usually used to controllably tune the carrier concentrations, further modulating the electrical conductivity and Seebeck coefficient to obtain the optimum thermoelectric figure of merit in two-dimensional materials. On the other hand, it is necessary to investigate how an electric field induced by a gate affects the electronic structures, further determining the thermoelectric properties.


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.


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