Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

Xue-feng She; Jingsong Wang; Qingguo Xue; Wentao Xu

doi:10.1039/c7ra90001e

Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

RSC Advances ◽

10.1039/c7ra90001e ◽

2017 ◽

Vol 7 (8) ◽

pp. 4645-4645

Author(s):

Xue-feng She ◽

Jingsong Wang ◽

Qingguo Xue ◽

Wentao Xu

Keyword(s):

Rare Earth ◽

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors ◽

High K

Correction for ‘Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors’ by Xue-feng She et al., RSC Adv., 2016, 6, 114593–114598.

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Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

RSC Advances ◽

10.1039/c6ra24071b ◽

2016 ◽

Vol 6 (115) ◽

pp. 114593-114598 ◽

Cited By ~ 5

Author(s):

Xue-feng She ◽

Jingsong Wang ◽

Qingguo Xue ◽

Wentao Xu

Keyword(s):

Rare Earth ◽

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors ◽

High K

Raw product of rare-earth ore was found to be good candidate for fabricating high-k gate insulator in field-effect transistors.

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Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator

Advanced Functional Materials ◽

10.1002/adfm.200400570 ◽

2005 ◽

Vol 15 (6) ◽

pp. 1017-1022 ◽

Cited By ~ 119

Author(s):

L. A. Majewski ◽

R. Schroeder ◽

M. Grell

Keyword(s):

Field Effect ◽

High Performance ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors ◽

Tio2 Layer

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Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dk01 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DK01 ◽

Cited By ~ 2

Author(s):

Min Liao ◽

Hiroshi Ishiwara ◽

Shun-ichiro Ohmi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Room temperature fabrication of HfON gate insulator for low-voltage operating pentacene-based organic field-effect transistors

10.7567/ssdm.2011.b-3-1 ◽

2011 ◽

Author(s):

M. Liao ◽

H. Ishiwara ◽

S. Ohmi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Organic field-effect transistors with cross-linked high-k cyanoethylated pullulan polymer as a gate insulator

Organic Electronics ◽

10.1016/j.orgel.2010.03.016 ◽

2010 ◽

Vol 11 (6) ◽

pp. 996-1004 ◽

Cited By ~ 37

Author(s):

Wentao Xu ◽

Shi-Woo Rhee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors ◽

High K

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Low-voltage Organic Field-effect Transistors with a Gate Insulator of Ta2O5Formed by Sputtering

Chemistry Letters ◽

10.1246/cl.2004.1172 ◽

2004 ◽

Vol 33 (9) ◽

pp. 1172-1173 ◽

Cited By ~ 13

Author(s):

Heisuke Sakai ◽

Yukio Furukawa ◽

Eiichi Fujiwara ◽

Hirokazu Tada

Keyword(s):

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.3269579 ◽

2009 ◽

Vol 95 (22) ◽

pp. 223303 ◽

Cited By ~ 33

Author(s):

Shree Prakash Tiwari ◽

Xiao-Hong Zhang ◽

William J. Potscavage ◽

Bernard Kippelen

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

Layer Deposition ◽

High K

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Solution processed photopatternable high-k nanocomposite gate dielectric for low voltage organic field effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2012.02.045 ◽

2012 ◽

Vol 96 ◽

pp. 92-95 ◽

Cited By ~ 5

Author(s):

Ramesh R. Navan ◽

K. Prashanthi ◽

M. Shojaei Baghini ◽

V. Ramgopal Rao

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

High K

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Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dk01 ◽

2012 ◽

Vol 51 ◽

pp. 04DK01 ◽

Cited By ~ 5

Author(s):

Min Liao ◽

Hiroshi Ishiwara ◽

Shun-ichiro Ohmi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Low Voltage ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_233 ◽

2014 ◽

pp. 905-906 ◽

Cited By ~ 2

Author(s):

Sarita Yadav ◽

Subhasis Ghosh

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

High K ◽

High K Gate Dielectric

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