Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator

2005 ◽  
Vol 15 (6) ◽  
pp. 1017-1022 ◽  
Author(s):  
L. A. Majewski ◽  
R. Schroeder ◽  
M. Grell
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Tio2 Layer

Low-Voltage, High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons

2019 ◽  
Vol 11 (37) ◽  
pp. 34188-34195 ◽  
Author(s):  
Hongming Chen ◽  
Xing Xing ◽  
Miao Zhu ◽  
Jupeng Cao ◽  
Muhammad Umair Ali ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires

2011 ◽  
Vol 4 (1) ◽  
pp. 6-10 ◽  
Author(s):  
Sooji Nam ◽  
Jaeyoung Jang ◽  
Jong-Jin Park ◽  
Sang Won Kim ◽  
Chan Eon Park ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114593-114598 ◽  
Author(s):  
Xue-feng She ◽  
Jingsong Wang ◽  
Qingguo Xue ◽  
Wentao Xu
Keyword(s):  
Rare Earth ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
High K

Raw product of rare-earth ore was found to be good candidate for fabricating high-k gate insulator in field-effect transistors.

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