Entrapment of interfacial nanobubbles on nano-structured surfaces

Soft Matter ◽  
2017 ◽  
Vol 13 (32) ◽  
pp. 5381-5388 ◽  
Author(s):  
Yuliang Wang ◽  
Xiaolai Li ◽  
Shuai Ren ◽  
Hadush Tedros Alem ◽  
Lijun Yang ◽  
...  

The nucleation mechanism of interfacial nanobubbles is revealed on immersed nanostructured hydrophobic surfaces. The result shows that surface nanostructures play a key role in controlling nanobubbles' size, position, and even morphology.

Author(s):  
Min Chen ◽  
Bing-Yang Cao ◽  
Zeng-Yuan Guo

Understanding the effects of surface nanostructures on fluid flow in micro- and nano-channels is highly desirable for micro/nano-electro-mechanical systems. By way of equilibrium and non-equilibrium molecular dynamics simulations, wetting on nano-structured surfaces and liquid flow in nano-channels with structured surfaces are simulated. The surfaces show dual effects on the boundary slip and friction of the liquid flow in nano-channels. Generally, the nanostructures enhance the surface hydrophilicity for a hydrophilic liquid-solid interaction, and increase the hydrophobicity for a hydrophobic interaction. Simultaneously, the nanostructures distort the nanoscale streamlines of the liquid flow near the channel surface and block the flow, which decreases the apparent slip length. The twofold effects of the nanostructures on the surface wettability and the hydrodynamic disturbance result in a non-monotonic dependence of the slip length on the structure’s size. However, the surface structure may lead to a very high contact angle of about 170° in some cases, which cause the surface show super-hydrophobicity and lead to a remarkable velocity slip. The surface nanostructures can thus be applied to control the friction of micro- and nano-flows. In addition, the gaseous flows in micro- and nano-channels with structured surfaces are simulated. The geometry of the surface is modeled by triangular, rectangular, sinusoidal and randomly triangular nanostructures respectively. The results show that the velocity slips, including negative slip, depend not only on the Knudsen number but also the surface structure. The impacts of the surface nanostructure and the gas rarefaction are strongly coupled. In general, the slip length of a gaseous flow over a structured surface is less than what predicted by the Maxwell model, and depends not only on the Knudsen number but also the size of the surface nanostructures.


Author(s):  
Emre Olceroglu ◽  
Stephen M. King ◽  
Md. Mahamudur Rahman ◽  
Matthew McCarthy

The increased heat transfer achieved through dropwise condensation, as compared to filmwise condensation, has the potential to substantially impact a variety of applications including high-heat flux thermal management systems, integrated electronics cooling, and various industrial and chemical processes. Here, we report stable dropwise condensation onto biotemplated nanostructured super-hydrophobic surfaces. We have demonstrated continuous droplet coalescence and ejection at diameters of less than 20 μm and compared directly with flat hydrophobic surfaces. The self-ejection mechanism characteristic of dropwise condensation has been shown using a simple bio-nano-fabrication technique based on the self-assembly and mineralization of the Tobacco mosaic virus (TMV). This process is extendable to commercially relevant nanomanufacturing of both microscale electronics devices as well as large-scale large-area industrial equipment. This manufacturing flexibility is unique as compared to many other micro/nano-structured surfaces fabricated to demonstrate similar increases in condensation heat transfer.


Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.


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