Optimization of High Thermoelectric Figure-of-Merit in p-type Ag1-x(Pb1-ySny)mSb1-zTem+2

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kyunghan Ahn ◽  
Mercouri G Kanatzidis
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Practical Applications ◽  
P Type

AbstractThe Ag1-x(Pb1-ySny)mSb1-zTem+2 compounds have been found to exhibit high performance p-type thermoelectric properties and are now being considered for practical applications. In this paper, various m values and silver concentrations were investigated to determine the effect on thermoelectric properties. Also, the charge-compensated compounds were studied in order to eliminate the problem of excess tellurium evaporation at high temperature.

Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
State Of The Art ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Jet Propulsion ◽  
P Type ◽  
Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

scholarly journals Thermoelectric properties of DO3 V3Al using first principles calculations

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 44647-44654 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Hong Chen
Keyword(s):  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
First Principles Calculations ◽  
Thermoelectric Figure ◽  
P Type

The calculated thermoelectric figure of merit ZT as a function of temperature for n-type antiferromagnetic DO3 V3Al and p-type antiferromagnetic DO3 V3Al is investigated.

scholarly journals Enhanced thermoelectric performance and high-temperature thermal stability of p-type Ag-doped β-Zn4Sb3

2018 ◽  
Vol 6 (9) ◽  
pp. 4079-4087 ◽  
Author(s):  
Lirong Song ◽  
Anders B. Blichfeld ◽  
Jiawei Zhang ◽  
Hidetaka Kasai ◽  
Bo B. Iversen
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Ag Doping ◽  
P Type ◽  
Thermal Stability Of

Ag doping in β-Zn4Sb3 leads to the enhanced thermoelectric figure-of-merit (zT) and improved high-temperature thermal stability.

The Enhanced Thermoelectric Properties of Ba0.4Co4Sb11.7Te0.3 Prepared by the High-Pressure and High-Temperature Method

2014 ◽  
Vol 33 (1) ◽  
pp. 59-63
Author(s):  
Song Hao ◽  
Hong An Ma ◽  
Le Deng ◽  
Kai Kai Jie ◽  
Zhe Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
X Ray Diffraction ◽  
Thermoelectric Figure ◽  
Seebeck Coefficients ◽  
Temperature Method ◽  
Increasing Temperature

AbstractPolycrystalline skutterudite Ba0.4Co4Sb11.7Te0.3 with a bcc crystal structure was prepared by the High-Pressure and High-Temperature (HPHT) method. The study explored a chemical method for introducing Ba atoms into the voids of CoSb3 to optimize the thermoelectric figure of merit ZT in the system of Ba0.4Co4Sb11.7Te0.3. The samples were characterized by X-ray diffraction, electron microprobe analysis, and thermoelectric properties measurement. The electrical resistivity, Seebeck coefficients and thermal conductivities of the samples were measured in the temperature range of 300–743 K. The power factor and the figure of merit, ZT, of the samples all increased with the increasing temperature. A dimensionless thermoelectric figure of merit of 0.87 at 743 K was achieved for n-type Ba0.4Co4Sb11.7Te0.3 at last. The results indicated Ba-filled CoSb3 prepared by HPHT method is an effective method to greatly enhance the thermoelectric properties of skutterudite compounds.

Thermoelectric Properties of BaxCo4Sb12 Prepared by High Pressure and High Temperature

2011 ◽  
Vol 415-417 ◽  
pp. 1615-1619
Author(s):  
Bing Ke Qin ◽  
Yong Hua Ji ◽  
Zhi Li ◽  
Xiao Peng Jia
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Filled Skutterudite

Polycrystalline filled Skutterudite compounds BaxCo4Sb12(0-x-0.5) are synthesized by high pressure and high temperature （HPHT） technique. The thermal conductivity for CoSb3is depressed significantly by Ba-filling combined HPHT technique. The value of 1.25 Wm-1K-1for Ba0.372Co4Sb12is obtained at 633K. The dimensionless thermoelectric figure of merit ZT, increases with temperature increasing and reaches a maximal value of 1.01 at 663 K.

scholarly journals First-principles study of strain effect on the thermoelectric properties of LaP and LaAs

2021 ◽  
Author(s):  
Chia-Min Lin ◽  
Wei-Chih Chen ◽  
Cheng-Chien Chen
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Strain Effect ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
First Principles Study ◽  
Quantum Materials

The thermoelectric figure of merit ZT value of quantum materials lanthanum monopnictides can be boosted to ZT > 2 by isotropic strain at high temperature.

scholarly journals Thermoelectric properties of Ni0.15Co3.85Sb12 and Fe0.2Ni0.15Co3.65Sb12 skutterudites prepared by HPHT method

2017 ◽  
Vol 35 (3) ◽  
pp. 496-500 ◽  
Author(s):  
Lingjiao Kong ◽  
Hongan Ma ◽  
Yuewen Zhang ◽  
Xin Guo ◽  
Bing Sun ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
High Pressure ◽  
High Temperature ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Synthesis Time

AbstractN-type polycrystalline skutterudite compounds Ni0.15Co3.85Sb12 and Fe0.2Ni0.15Co3.65Sb12 with the bcc crystal structure were synthesized by high pressure and high temperature (HPHT) method. The synthesis time was sharply reduced to approximately half an hour. Typical microstructures connected with lattice deformations and dislocations were incorporated in the samples of Ni0.15Co3.85Sb12 and Fe0.2Ni0.15Co3.65Sb12 after HPHT. Electrical and thermal transport properties were meticulously researched in the temperature range of 300 K to 700 K. The Fe0.2Ni0.15Co3.65Sb12 sample shows a lower thermal conductivity than that of Ni0.15Co3.85Sb12. The dimensionless thermoelectric figure-of-merit (zT) reaches the maximal values of 0.52 and 0.35 at 600 K and 700 K respectively, for Ni0.15Co3.85Sb12 and Fe0.2Ni0.15Co3.65Sb12 samples synthesized at 1 GPa.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

2014 ◽  
Vol 602-603 ◽  
pp. 906-909 ◽  
Author(s):  
Yao Chun Liu ◽  
Jun Fu Liu ◽  
Bo Ping Zhang ◽  
Yuan Hua Lin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Layer Structure ◽  
Thermoelectric Figure Of Merit ◽  
Ni Doping ◽  
Thermoelectric Figure ◽  
P Type

We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2-layers alternately stacked with insulating (Bi2O2)2+layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm-1K-2at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi0.95Ni0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi2O2)2+layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

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