Band bending in conjugated polymer films: role of morphology and implications for bulk charge transport characteristics

2017 ◽  
Vol 5 (30) ◽  
pp. 7446-7451 ◽  
Author(s):  
J. K. Wenderott ◽  
Ban Xuan Dong ◽  
Peter F. Green
Keyword(s):  
Charge Transport ◽  
Polymer Films ◽  
Conjugated Polymer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Band Bending ◽  
Force Microscopy ◽  
Bending Effect ◽  
Bulk Charge

The band bending effect depends on the morphology of the conjugated polymer as studied by Kelvin probe force microscopy.

scholarly journals Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ting-Xiao Qin ◽  
En-Ming You ◽  
Mao-Xin Zhang ◽  
Peng Zheng ◽  
Xiao-Feng Huang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
Cell Performance ◽  
Kelvin Probe Force Microscopy ◽  
Light Illumination ◽  
Kelvin Probe ◽  
Solar Cell Performance ◽  
Force Microscopy ◽  
Infrared Spectroscopic

AbstractOrganic–inorganic halide perovskites are emerging materials for photovoltaic applications with certified power conversion efficiencies (PCEs) over 25%. Generally, the microstructures of the perovskite materials are critical to the performances of PCEs. However, the role of the nanometer-sized grain boundaries (GBs) that universally existing in polycrystalline perovskite films could be benign or detrimental to solar cell performance, still remains controversial. Thus, nanometer-resolved quantification of charge carrier distribution to elucidate the role of GBs is highly desirable. Here, we employ correlative infrared-spectroscopic nanoimaging by the scattering-type scanning near-field optical microscopy with 20 nm spatial resolution and Kelvin probe force microscopy to quantify the density of electrons accumulated at the GBs in perovskite polycrystalline thin films. It is found that the electron accumulations are enhanced at the GBs and the electron density is increased from 6 × 1019 cm−3 in the dark to 8 × 1019 cm−3 under 10 min illumination with 532 nm light. Our results reveal that the electron accumulations are enhanced at the GBs especially under light illumination, featuring downward band bending toward the GBs, which would assist in electron-hole separation and thus be benign to the solar cell performance.

Kelvin Probe Force Microscopy Study of Conjugated Polymer/Fullerene Organic Solar Cells

2005 ◽  
Vol 44 (7B) ◽  
pp. 5370-5373 ◽  
Author(s):  
Thilo Glatzel ◽  
Harald Hoppe ◽  
Niyazi S. Sariciftci ◽  
Martha Ch. Lux-Steiner ◽  
Masaharu Komiyama
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Conjugated Polymer ◽  
Microscopy Study ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

2010 ◽  
Vol 97 (17) ◽  
pp. 172111 ◽  
Author(s):  
J. D. Wei ◽  
S. F. Li ◽  
A. Atamuratov ◽  
H.-H. Wehmann ◽  
A. Waag
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals Correlative analysis of embedded silicon interfaces passivation by “Kelvin probe force microscopy” and “corona oxide characterization of semiconductor”

2021 ◽  
Author(s):  
Valentin Aubriet ◽  
Kristell Courouble ◽  
Mickael Gros-Jean ◽  
Lukasz Borowik
Keyword(s):  
Field Effect ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Surface Band ◽  
Worst Case ◽  
Band Bending ◽  
Force Microscopy ◽  
Correlative Analysis ◽  
Chemical Passivation

    We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) for the study of embedded silicon-oxide interfaces in the field of chemical and field-effect passivation. Analyzed parameters by these measurements are linked to different factors and specifically to defects density of embedded silicon-dielectric interfaces, surface band bending or the distribution of charges in the nearest surface volume. Furthermore, this COCOS-KPFM correlative analysis turns out to be a useful method to access to chemical and field-effect passivation. We confirm that it is possible to differentiate the influence of local band bending on sample passivation (i.e. field effect passivation) from the effects due to the local recombination rates (i.e. chemical passivation). The measurements were carried on five different passivation layers, precisely, 10.5 nm-thick SiO2, 50 nm-thick SiN, 7nm-thick Al2O3, 7 nm-thick HfO2 and double layer of 7 nm-thick Al2O3 below 53 nm-thick Ta2O5. This correlative analysis indicates that HfO2 present to be the best chemical passivation and SiN is the worst case in term of field effect passivation for p-type silicon. Additionally, we confirm that Ta2O5 layer on top of Al2O3 increase the defects density.

scholarly journals The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells

Nano Energy ◽  
2021 ◽  
pp. 106270
Author(s):  
Evandro Martin Lanzoni ◽  
Thibaut Gallet ◽  
Conrad Spindler ◽  
Omar Ramírez ◽  
Christian Kameni Boumenou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Band Bending ◽  
Force Microscopy ◽  
Operation Modes ◽  
The Impact

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

2018 ◽  
Vol 10 (14) ◽  
pp. 11987-11994 ◽  
Author(s):  
Martin Konečný ◽  
Miroslav Bartošík ◽  
Jindřich Mach ◽  
Vojtěch Švarc ◽  
David Nezval ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Silicon Dioxide ◽  
Charge Transport ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy
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