Ab initio phase diagrams of Hf–O, Zr–O and Y–O: a comparative study

2019 ◽  
Vol 213 ◽  
pp. 321-337 ◽  
Author(s):  
Konstantin Z. Rushchanskii ◽  
Stefan Blügel ◽  
Marjana Ležaić
Keyword(s):  
Comparative Study ◽  
Ab Initio ◽  
Phase Diagrams ◽  
Resistive Switching ◽  
Binary Oxides ◽  
Host Materials ◽  
Evolutionary Simulations ◽  
Switching Devices

We present phase diagrams of binary oxides, Hf–O, Zr–O and Y–O, obtained by ab initio evolutionary simulations, in order to explore possible metastable crystalline suboxide structures which could be quenched during the electroforming processes within the conductive filaments in stoichiometric HfO2, ZrO2 and Y2O3 host materials, in resistive switching devices.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

Unimolecular Pyrolysis Mechanism of Thiophene and Furan: An Ab Initio Comparative Study

2021 ◽  
Author(s):  
Tianshuang Li ◽  
Jie Li ◽  
Hongliang Zhang ◽  
Jingkun Wang ◽  
Jin Xiao
Keyword(s):  
Comparative Study ◽  
Ab Initio ◽  
Pyrolysis Mechanism

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

scholarly journals Exploring PtSO4 and PdSO4 phases: an evolutionary algorithm based investigation

2015 ◽  
Vol 17 (27) ◽  
pp. 18146-18151 ◽  
Author(s):  
Hom Sharma ◽  
Vinit Sharma ◽  
Tran Doan Huan
Keyword(s):  
Ab Initio ◽  
Evolutionary Algorithm ◽  
Phase Diagrams ◽  
Temperature Phase

New phases of PtSO4 and PdSO4 are identified and their pressure–temperature phase diagrams are constructed using ab initio calculations.

Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

2018 ◽  
Vol 18 (4) ◽  
pp. 2650-2656 ◽  
Author(s):  
Xuejiao Zhang ◽  
Zhiwei Xu ◽  
Bai Sun ◽  
Jianjun Liu ◽  
Yanyan Cao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Multiple State ◽  
Switching Devices

Comparative Study of Li, Na, and K Adsorptions on Graphite by Using ab Initio Method

Langmuir ◽  
2004 ◽  
Vol 20 (24) ◽  
pp. 10751-10755 ◽  
Author(s):  
Z. H. Zhu ◽  
G. Q. Lu
Keyword(s):  
Comparative Study ◽  
Ab Initio ◽  
Ab Initio Method

Local heating-induced plastic deformation in resistive switching devices

2011 ◽  
Vol 110 (5) ◽  
pp. 054514 ◽  
Author(s):  
W. Jiang ◽  
R. J. Kamaladasa ◽  
Y. M. Lu ◽  
A. Vicari ◽  
R. Berechman ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Resistive Switching ◽  
Local Heating ◽  
Switching Devices

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

2021 ◽  
Author(s):  
C. Santa Cruz Gonzalez ◽  
B. Sahelices ◽  
J. Jimenez ◽  
O. G. Ossorio ◽  
H. Castan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Devices
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