Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.
AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.
This paper reports the fundamentals and SPICE implementation of the dynamic memdiode model (DMM) for the conduction characteristics of bipolar resistive switching devices. The model equations are implemented in the LTSpice simulator using an equivalent circuital approach with behavioral components and sources.
AbstractIn this work we study the defects responsible for the degradation of high power AlGaAs based laser bars. The mirror and cavity degradations are studied by spectral cathodoluminescence (CL) imaging. Following the analysis of the CL images the main defects generated during the laser operation are revealed, both facet and intracavity defects are observed. A thermomechanical model is used to describe the very beginning of the defect formation. The defects are formed by a local plastic deformation induced by local heating at defects.
Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device