Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

2020 ◽  
Vol 22 (23) ◽  
pp. 13277-13284
Author(s):  
Wanchao Zheng ◽  
Yuchen Wang ◽  
Chao Jin ◽  
Ruihua Yin ◽  
Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Depletion Layer ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Layer Width ◽  
Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20497-20506 ◽  
Author(s):  
Junjun Wang ◽  
Feng Wang ◽  
Lei Yin ◽  
Marshet Getaye Sendeku ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Transition Metal Oxide ◽  
Switching Behavior ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Layered Transition Metal

Nonvolatile resistive random access memories based on synthesized two-dimensional α-MoO3 crystals are demonstrated with high performances.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based
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