Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

2020 ◽  
Vol 22 (23) ◽  
pp. 13277-13284
Author(s):  
Wanchao Zheng ◽  
Yuchen Wang ◽  
Chao Jin ◽  
Ruihua Yin ◽  
Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Depletion Layer ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Layer Width ◽  
Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

Effect of La0.67Sr0.33 MnO3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O3/Nb:SrTiO3 Heterostructures

NANO ◽  
2020 ◽  
Vol 15 (07) ◽  
pp. 2050084
Author(s):  
Jing Yi Dong ◽  
Yu Bai ◽  
Hang Yu Zheng ◽  
He Yang Huang ◽  
Jun Liang Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Resistive Switching ◽  
Interfacial Energy ◽  
Energy Band ◽  
Interface Structure ◽  
Energy Band Structure ◽  
Depletion Layer ◽  
Semiconductor Heterostructures ◽  
Ferroelectric Polarization ◽  
Layer Width

Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 778 ◽  
pp. 88-91
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn2O4films annealed at 600°C have the biggestRHRS/RLRSratio, the lowestVONandVOFF. TheRHRS/RLRSratios of all specimens maintain at about 103after successive 1000 switching cycles, which indicated that the Ag/ZnMn2O4/p-Si device has better endurance characteristics.

scholarly journals Unipolar resistive switching behavior in sol–gel synthesized FeSrTiO3 thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 54111-54116 ◽  
Author(s):  
Atul Thakre ◽  
Jyoti Kaswan ◽  
A. K. Shukla ◽  
Ashok Kumar
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Resistive Switching ◽  
Sol Gel ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Charge Retention ◽  
Resistance State ◽  
Unipolar Resistive Switching

A robust and reproducible resistance switching in iron substituted strontium titanate is reported which shows giant high to low resistance state ratio (∼105) and stable charge retention.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior
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