Research on Integration of Two Dimensional Materials in Resistive Switching Devices

2021 ◽  
Vol 2 (2) ◽  
pp. 2021-02139-2021-02139
Author(s):  
Fuat Ozan Dengiz
Keyword(s):  
Resistive Switching ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Switching Devices

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

2017 ◽  
Vol 5 (4) ◽  
pp. 862-871 ◽  
Author(s):  
Ghayas Uddin Siddiqui ◽  
Muhammad Muqeet Rehman ◽  
Young-Jin Yang ◽  
Kyung Hyun Choi
Keyword(s):  
Boron Nitride ◽  
Resistive Switching ◽  
Electronic Device ◽  
Hexagonal Boron Nitride ◽  
Polymer Nanocomposite ◽  
Hybrid Nanocomposites ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Device Applications ◽  
Switching Devices

Organic–inorganic hybrid nanocomposites are an attractive choice for various electronic device applications.

Redox-Active Approach Towards New Magnetic And Conductive Two-Dimensional Materials

2018 ◽  
Author(s):  
Penny Perlepe ◽  
Rodolphe Clérac ◽  
Itziar Oyarzabal ◽  
Corine Mathonière
Keyword(s):  
Two Dimensional ◽  
Active Approach ◽  
Redox Active ◽  
Two Dimensional Materials

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

Two‐dimensional materials and synthesis, energy storage, utilization, and conversion applications of two‐dimensional MXene materials

2021 ◽  
Author(s):  
Urooj Fatima ◽  
Muhammad Bilal Tahir ◽  
Muhammad Sagir ◽  
Nisar Fatima ◽  
Tasmia Nawaz ◽  
...  
Keyword(s):  
Energy Storage ◽  
Two Dimensional ◽  
Two Dimensional Materials

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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