6,6′-Diaryl-substituted biazulene diimides for solution-processable high-performance n-type organic semiconductors

2018 ◽  
Vol 2 (5) ◽  
pp. 975-985 ◽  
Author(s):  
Hanshen Xin ◽  
Jing Li ◽  
Congwu Ge ◽  
Xiaodi Yang ◽  
Tianrui Xue ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
High Performance ◽  
Molecular Packing ◽  
High Electron ◽  
High Electron Mobility ◽  
Dipolar Moment ◽  
Solution Processable

High electron mobility derived from dense molecular packing induced by the dipolar moment of azulene units.

Thiophene-S,S-dioxidized indophenines as high performance n-type organic semiconductors for thin film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (51) ◽  
pp. 45410-45418 ◽  
Author(s):  
Yunfeng Deng ◽  
Bin Sun ◽  
Jesse Quinn ◽  
Yinghui He ◽  
Jackson Ellard ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Energy Levels ◽  
High Electron ◽  
High Electron Mobility ◽  
Type Semiconductor

Three thiophene-S,S-dioxidized indophenines with deep frontier energy levels are synthesized from isatins and thiophene, which exhibit n-type semiconductor performance with high electron mobility of up to 0.11 cm2 V−1 s−1 in thin film transistors.

scholarly journals Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 829 ◽  
pp. 154542 ◽  
Author(s):  
Bing Ren ◽  
Meiyong Liao ◽  
Masatomo Sumiya ◽  
Jian Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Mohammad Javad Sharifi ◽  
Davoud Bahrepour
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Xor Gate ◽  
High Electron Mobility ◽  
Existing Structures ◽  
Input And Output ◽  
Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate

2018 ◽  
Vol 762 ◽  
pp. 933-940 ◽  
Author(s):  
Xinglai Zhang ◽  
Yanan Jiang ◽  
Baodan Liu ◽  
Wenjin Yang ◽  
Jing Li ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron ◽  
High Electron Mobility
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