scholarly journals Poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymer for non-volatile memory applications

2008 ◽  
Author(s):  
Anh Chien Nguyen
2011 ◽  
Vol 99 (1) ◽  
pp. 012901 ◽  
Author(s):  
Gwang-Geun Lee ◽  
Eisuke Tokumitsu ◽  
Sung-Min Yoon ◽  
Yoshihisa Fujisaki ◽  
Joo-Won Yoon ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 7963-7968 ◽  
Author(s):  
Huie Zhu ◽  
Shunsuke Yamamoto ◽  
Jun Matsui ◽  
Tokuji Miyashita ◽  
Masaya Mitsuishi

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene blend nanosheets show good resistive non-volatile memory performance with a fresh high ON/OFF ratio and long endurance to 30 days.


2010 ◽  
Vol 17 (4) ◽  
pp. 1135-1163 ◽  
Author(s):  
Youn Park ◽  
In-sung Bae ◽  
Seok Kang ◽  
Jiyoun Chang ◽  
Cheolmin Park

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.


2010 ◽  
Vol 11 (5) ◽  
pp. 925-932 ◽  
Author(s):  
D. Mao ◽  
M.A. Quevedo-Lopez ◽  
H. Stiegler ◽  
B.E. Gnade ◽  
H.N. Alshareef

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.


1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  

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