A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

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The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

Applied Physics Letters ◽

10.1063/1.3608145 ◽

2011 ◽

Vol 99 (1) ◽

pp. 012901 ◽

Cited By ~ 56

Author(s):

Gwang-Geun Lee ◽

Eisuke Tokumitsu ◽

Sung-Min Yoon ◽

Yoshihisa Fujisaki ◽

Joo-Won Yoon ◽

...

Keyword(s):

Vinylidene Fluoride ◽

Memory Devices ◽

Oxide Semiconductors ◽

Ferroelectric Polymer ◽

Poly Vinylidene Fluoride ◽

Non Volatile Memory ◽

Volatile Memory

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Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

MRS Proceedings ◽

10.1557/proc-665-c10.10 ◽

2001 ◽

Vol 665 ◽

Author(s):

Feng Xia ◽

H.S. Xu ◽

Babak Razavi ◽

Q. M. Zhang

Keyword(s):

Thin Films ◽

Vinylidene Fluoride ◽

Ferroelectric Properties ◽

Large Change ◽

Thickness Dependence ◽

Dielectric Measurement ◽

Switching Speed ◽

Wide Range ◽

Poly Vinylidene Fluoride ◽

Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

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Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.1056 ◽

2014 ◽

Vol 602-603 ◽

pp. 1056-1059 ◽

Cited By ~ 2

Author(s):

Min Chang Kuan ◽

Fann Wei Yang ◽

Chien Min Cheng ◽

Kai Huang Chen ◽

Jian Tz Lee

Keyword(s):

Thin Film ◽

Thin Films ◽

Manganese Oxide ◽

Random Access ◽

Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Resistance Random Access Memory ◽

Non Volatile Memory ◽

Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

RSC Advances ◽

10.1039/c8ra01143e ◽

2018 ◽

Vol 8 (15) ◽

pp. 7963-7968 ◽

Cited By ~ 4

Author(s):

Huie Zhu ◽

Shunsuke Yamamoto ◽

Jun Matsui ◽

Tokuji Miyashita ◽

Masaya Mitsuishi

Keyword(s):

Vinylidene Fluoride ◽

Memory Performance ◽

Poly Vinylidene Fluoride ◽

Non Volatile Memory ◽

Volatile Memory ◽

Long Endurance

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene blend nanosheets show good resistive non-volatile memory performance with a fresh high ON/OFF ratio and long endurance to 30 days.

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