The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

2011 ◽  
Vol 99 (1) ◽  
pp. 012901 ◽  
Author(s):  
Gwang-Geun Lee ◽  
Eisuke Tokumitsu ◽  
Sung-Min Yoon ◽  
Yoshihisa Fujisaki ◽  
Joo-Won Yoon ◽  
...  
Keyword(s):  
Vinylidene Fluoride ◽  
Memory Devices ◽  
Oxide Semiconductors ◽  
Ferroelectric Polymer ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Polymer Thin Films ◽  
Annealing Process ◽  
Memory Devices ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

scholarly journals Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 7963-7968 ◽  
Author(s):  
Huie Zhu ◽  
Shunsuke Yamamoto ◽  
Jun Matsui ◽  
Tokuji Miyashita ◽  
Masaya Mitsuishi
Keyword(s):  
Vinylidene Fluoride ◽  
Memory Performance ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Long Endurance

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene blend nanosheets show good resistive non-volatile memory performance with a fresh high ON/OFF ratio and long endurance to 30 days.

Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

2010 ◽  
Vol 11 (5) ◽  
pp. 925-932 ◽  
Author(s):  
D. Mao ◽  
M.A. Quevedo-Lopez ◽  
H. Stiegler ◽  
B.E. Gnade ◽  
H.N. Alshareef
Keyword(s):  
Flexible Electronics ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Molecular modeling of the piezoelectric effect in the ferroelectric polymer poly(vinylidene fluoride) (PVDF)

2013 ◽  
Vol 19 (9) ◽  
pp. 3591-3602 ◽  
Author(s):  
Vladimir S. Bystrov ◽  
Ekaterina V. Paramonova ◽  
Igor K. Bdikin ◽  
Anna V. Bystrova ◽  
Robert C. Pullar ◽  
...  
Keyword(s):  
Molecular Modeling ◽  
Vinylidene Fluoride ◽  
Piezoelectric Effect ◽  
Ferroelectric Polymer ◽  
Poly Vinylidene Fluoride

Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

2020 ◽  
Vol 78 ◽  
pp. 105584 ◽  
Author(s):  
Jia-Qin Yang ◽  
Li-Yu Ting ◽  
Ruopeng Wang ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
...  
Keyword(s):  
Small Molecules ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Comparing domain wall synapse with other non volatile memory devices for on-chip learning in analog hardware neural network

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025111 ◽  
Author(s):  
Divya Kaushik ◽  
Utkarsh Singh ◽  
Upasana Sahu ◽  
Indu Sreedevi ◽  
Debanjan Bhowmik
Keyword(s):  
Neural Network ◽  
Domain Wall ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
On Chip ◽  
Hardware Neural Network
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