scholarly journals Establishment of a reliable transfer process for fabricating chemical vapor deposition-grown graphene films with advanced and repeatable electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19846-19851 ◽  
Author(s):  
Dongyun Sun ◽  
Wei Wang ◽  
Zhaoping Liu

Graphene films grown by the chemical vapor deposition (CVD) method have attracted intensive attention due to their native advantages of both high quality and large quantity for commercial applications.

2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.


2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  

2012 ◽  
Vol 13 (1) ◽  
pp. 44-47 ◽  
Author(s):  
Hong-Kyw Choi ◽  
Jong-Yun Kim ◽  
Hu-Young Jeong ◽  
Choon-Gi Choi ◽  
Sung-Yool Choi

RSC Advances ◽  
2020 ◽  
Vol 10 (35) ◽  
pp. 20438-20444
Author(s):  
Ning Li ◽  
Yawen Yuan ◽  
Jinglei Liu ◽  
Shifeng Hou

In this work, chemical vapor deposition (CVD) method-grown graphene on plasma-etched quartz glass supported platinum nanoparticles (PtNPs/eQG) was constructed as an independent transparent electrode for non-enzymatic hydrogen peroxide (H2O2) detection.


Carbon ◽  
2012 ◽  
Vol 50 (2) ◽  
pp. 551-556 ◽  
Author(s):  
L. Huang ◽  
Q.H. Chang ◽  
G.L. Guo ◽  
Y. Liu ◽  
Y.Q. Xie ◽  
...  

1988 ◽  
Vol 116 ◽  
Author(s):  
Jack P. Salerno ◽  
D. S. Hill ◽  
J. W. Lee ◽  
R. E. McCullough ◽  
John C. C. Fan

AbstractThe growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.


2013 ◽  
Vol 102 (2) ◽  
pp. 023112 ◽  
Author(s):  
Toshiyuki Kobayashi ◽  
Masashi Bando ◽  
Nozomi Kimura ◽  
Keisuke Shimizu ◽  
Koji Kadono ◽  
...  

2015 ◽  
Vol 815 ◽  
pp. 18-21
Author(s):  
Tao Huang ◽  
Lin Chen ◽  
Qing Qing Sun ◽  
Peng Zhou ◽  
David Wei Zhang

Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated.


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