Investigation of Chemical Vapor Deposited Graphene Film on Oxide Substrate

2015 ◽  
Vol 815 ◽  
pp. 18-21
Author(s):  
Tao Huang ◽  
Lin Chen ◽  
Qing Qing Sun ◽  
Peng Zhou ◽  
David Wei Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Gas Flow Ratio ◽  
Device Applications ◽  
Grown Graphene ◽  
The Impact

Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

scholarly journals Characterization of chemical vapor deposition-grown graphene films with various etchants

2012 ◽  
Vol 13 (1) ◽  
pp. 44-47 ◽  
Author(s):  
Hong-Kyw Choi ◽  
Jong-Yun Kim ◽  
Hu-Young Jeong ◽  
Choon-Gi Choi ◽  
Sung-Yool Choi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Grown Graphene

scholarly journals Establishment of a reliable transfer process for fabricating chemical vapor deposition-grown graphene films with advanced and repeatable electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19846-19851 ◽  
Author(s):  
Dongyun Sun ◽  
Wei Wang ◽  
Zhaoping Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Transfer Process ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Cvd Method ◽  
Graphene Films ◽  
Grown Graphene ◽  
Commercial Applications

Graphene films grown by the chemical vapor deposition (CVD) method have attracted intensive attention due to their native advantages of both high quality and large quantity for commercial applications.

Intense UV-Visible-IR Adjustable Photoluminescence from Silicon-rich Oxynitride Layers Prepared by Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 560 ◽  
Author(s):  
Zingway Pei ◽  
Y.J. Chung ◽  
H.L. Hsiao ◽  
H.L. Hwang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Clusters ◽  
Process Gas ◽  
Gas Flow Ratio ◽  
Uv Visible

ABSTRACTThe intense UV-visible-IR adjustable light emissions from silicon-rich oxynitride thin films without any thermal annealing were observed at room temperature under a 325 nm He-Cd laser excitation. The silicon-rich oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) with the mixture of 5% Ar diluted silane and nitrous oxide gases. The strong naked-eye recognizable photoluminescence (blue-white-red) could be adjusted by changing the process gas flow ratio τ =([SiH4]/[N20]). To the best of our knowledge, intense and adjustable UV-blue light emissions in the as-deposited thin films are first reported in this work. The Fourier Transform infrared (FTIR) spectroscopy was applied to investigate the microstructure-bonding configurations, in which silicon polysilane related bonding at 830-890 cm' present that silicon complex, exists along with the Si-O-Si bonding. X-ray photoelectron spectroscopy was used to investigate the binding configuration, the binding energy of Si 2p appearing at 99.3 eV was indicative of formation of the silicon clusters. As a consequence, we suppose that the visible-IR lights emissions might possible be strongly related to silicon clusters formation in the films and the intense UV emissions might come from the oxygen-related defects.

Wetting behaviors and applications of metal-catalyzed CVD grown graphene

2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Graphene Films ◽  
Cvd Growth ◽  
Grown Graphene ◽  
Metal Catalyzed ◽  
Wetting Behaviors

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.

Multiple Transfer Used on Repairing Transparent and Electric Film Based on CVD - Grown Graphene

2013 ◽  
Vol 774-776 ◽  
pp. 634-639
Author(s):  
Peng Fei Zhao ◽  
Da Wei He ◽  
Yong Sheng Wang ◽  
Ming Fu ◽  
Hong Peng Wu ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Gas Flow ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Gas Flow Rate ◽  
Large Area ◽  
Spectroscopy Analysis ◽  
Photoelectric Device ◽  
Grown Graphene

We optimized the CH4 and H2 gas flow rate of chemical vapor deposition (CVD) graphene growth and obtained larger area, fewer-layered graphene grown on Cu foils. After transfering to SiO2 substrate by PMMA more than 3 times to repair the defect of monolayer graphene film, we synthesized large area, transparent and continuous graphene film. The morphology and structure were characterized by SEM and Raman spectroscopy. Analysis of electrical properties and optical properties show that we obtained low resistance and high transparency of ~90%, which could be used on photoelectric device as solar cell and acceptable for replacing commercial ITO electrodes.

scholarly journals Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

2015 ◽  
Vol 6 ◽  
pp. 2028-2038 ◽  
Author(s):  
Andrea Capasso ◽  
Theodoros Dikonimos ◽  
Francesca Sarto ◽  
Alessio Tamburrano ◽  
Giovanni De Bellis ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Pristine Graphene ◽  
Influence Of Process Parameters ◽  
Graphene Films ◽  
Doped Graphene

Graphene films were produced by chemical vapor deposition (CVD) of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp2 carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow) have on the morphology, transmittance, and electrical conductivity of the graphene films grown with pyridine. A temperature range between 930 and 1070 °C was explored and the results were compared to those of pristine graphene grown by ethanol-CVD under the same process conditions. The films were characterized by atomic force microscopy, Raman and X-ray photoemission spectroscopy. The optical transmittance and electrical conductivity of the films were measured to evaluate their performance as transparent conductive electrodes. Graphene films grown by pyridine reached an electrical conductivity of 14.3 × 105 S/m. Such a high conductivity seems to be associated with the electronic doping induced by substitutional nitrogen atoms. In particular, at 930 °C the nitrogen/carbon ratio of pyridine-grown graphene reaches 3%, and its electrical conductivity is 40% higher than that of pristine graphene grown from ethanol-CVD.

Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films

2009 ◽  
Vol 21 (1) ◽  
pp. 015601 ◽  
Author(s):  
Stefan Thiele ◽  
Alfonso Reina ◽  
Paul Healey ◽  
Jakub Kedzierski ◽  
Peter Wyatt ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thickness Uniformity ◽  
Graphene Films ◽  
Grown Graphene
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