scholarly journals Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)

RSC Advances ◽  
2018 ◽  
Vol 8 (64) ◽  
pp. 36632-36646 ◽  
Author(s):  
Poopathy Kathirgamanathan ◽  
Muttulingam Kumaraverl ◽  
Raghava Reddy Vanga ◽  
Seenivasagam Ravichandran
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Sol Gel ◽  
Intense Pulsed Light ◽  
Colloidal Quantum Dots ◽  
Zno Films ◽  
Pulsed Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Electron Injector

Room temperature intense pulsed light annealing (photonic annealing, pulsed forge) renders the sol–gel derived ZnO films highly conductive and hydrophobic with improved interface with the colloidal quantum dots.

scholarly journals STRONG PHOTOLUMINESCENCE EMISSION AT ROOM TEMPERATURE OF ZnS MICROWIRES AND MICROBELTS GROWN BY THERMAL DEPOSITION

2017 ◽  
Vol 33 (3) ◽  
Author(s):  
Nghia Nguyen Van
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Free Exciton ◽  
Great Promise ◽  
Ultraviolet Emission ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ar Gas

In this work, we report on the controlled synthesis of ZnS microstructures with high purity on Au-coated silicon substrates by thermal evaporation of ZnS powder in Ar gas ambient at atmospheric pressure. The growth mechanism is confirmed as a typical vapor–liquid–solid process. The prepared ZnS microstructures have wurtzite (hexagonal) structures. The catalytically grown ZnS microstructures, including microwires and microbelts, are tens of micrometers in length. EDS shows that the oxygen composition in the microstructures is trivial. The photoluminescence spectrum reveals strong ultraviolet emission and no other emission at room temperature also demonstrates that the ZnS microstructures are of high crystalline perfection. Optical transition from free exciton A, free exciton B are observed and analyzed through power-dependent at 10 K and temperature-dependent photoluminescence spectroscopy measurements performed from 10 to 300 K. Our results indicate that ZnS microstructures grown by thermal evaporation, suggesting a great promise for high-efficiency light-emitting devices and lasers in the UV region.

Fabrication of Micro-OLEDs by Room-temperature Curing Nanocontact-print Lithography Using DLC Molds

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Insulating Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ito Glass

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

High-efficiency blue and white organic light-emitting devices by combining fluorescent and phosphorescent blue emitters

2012 ◽  
Vol 13 (11) ◽  
pp. 2412-2416 ◽  
Author(s):  
Xuecheng Piao ◽  
Yongming Yin ◽  
Jian Liu ◽  
Yang Li ◽  
Kai Xu ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Blue Emitters ◽  
Organic Light Emitting Devices

Ultra High Efficiency Green Organic Light-Emitting Devices

2006 ◽  
Vol 46 (1) ◽  
pp. L10-L12 ◽  
Author(s):  
Daisaku Tanaka ◽  
Hisahiro Sasabe ◽  
Yan-Jun Li ◽  
Shi-Jian Su ◽  
Takashi Takeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

High-efficiency and good color quality white light-emitting devices based on polymer blend

2009 ◽  
Vol 10 (5) ◽  
pp. 843-848 ◽  
Author(s):  
Jianhua Zou ◽  
Jie Liu ◽  
Hongbin Wu ◽  
Wei Yang ◽  
Junbiao Peng ◽  
...  
Keyword(s):  
Polymer Blend ◽  
White Light ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Color Quality

High-efficiency phosphorescent polymer light-emitting devices

2003 ◽  
Vol 4 (2-3) ◽  
pp. 105-111 ◽  
Author(s):  
Shizuo Tokito ◽  
Mitsunori Suzuki ◽  
Fumio Sato ◽  
Motoaki Kamachi ◽  
Kourou Shirane
Keyword(s):  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Polymer Light Emitting Devices

Synthesis and Characterization of CaMgSi2O6 Activated by Eu2+

2016 ◽  
Vol 881 ◽  
pp. 30-34
Author(s):  
Agatha Matos Misso ◽  
Hermi F. Brito ◽  
Lucas C.V. Rodrigues ◽  
Vinicius R. Morais ◽  
Chieko Yamagata
Keyword(s):  
High Efficiency ◽  
Low Cost ◽  
Sol Gel ◽  
Solid State Reactions ◽  
Phase Identification ◽  
Molten Salt Method ◽  
Persistent Luminescence ◽  
Light Emitting ◽  
Fluorescent Lamps ◽  
White Light Emitting Diodes

Rare earth silicate based MnMgSi2O5+n (M = Ca, Sr or Ba and n=1-2) phosphors, have attracted interest of researchers due to their high efficiency as a host, excellent thermal and chemical stability and high brightness adding to their low cost. These phosphors showed great potential in various applications such as fluorescent lamps, white light emitting diodes, and display components. High temperature solid-state reactions are usually employed to synthesize those compounds. This paper proposes an alternative method of obtaining nanophosphor host based on Eu-doped CaMgSi2O6 (CMS:Eu), persistent luminescence phosphor. Sol gel technique combined to a modified molten salt method was used. The resulted powder was calcined for 3h under an atmosphere of 5% H2 and 95% Ar2. Phase identification by XRD and the measurements of photoluminescence (PL) and photoluminescence excitation (PLE) were performed. Single phased CMS:Eu with persistent luminescence characteristics was prepared.

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