scholarly journals Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31386-31397 ◽  
Author(s):  
Nico Koslowski ◽  
Rudolf C. Hoffmann ◽  
Vanessa Trouillet ◽  
Michael Bruns ◽  
Sabine Foro ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yttrium Oxide ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Oxide Formation ◽  
Molecular Precursor ◽  
P Transformation ◽  
Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

2019 ◽  
Vol 7 (4) ◽  
pp. 1048-1056 ◽  
Author(s):  
Nico Koslowski ◽  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Michael Bruns ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistor ◽  
Molecular Precursor ◽  
Precursor Route

Generation of dielectric amorphous aluminum oxide using a novel chimie douce molecular precursor route is reported.

Frequency Response of Thin-Film Bulk Acoustic Resonators to the Deposition of Tungsten, Platinum, Aluminium Oxide and Carbon Nanotube Thin-Films

2012 ◽  
Vol 4 (2) ◽  
pp. 111-117
Author(s):  
Martin Nirschl ◽  
Daniel Sickert ◽  
Ozlem Karaca ◽  
Matthias Schreiter ◽  
Janos Voros
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Frequency Response ◽  
Aluminium Oxide ◽  
Acoustic Resonators ◽  
Film Bulk Acoustic Resonators ◽  
Film Bulk

High Voltage, Moderate Current Thin Film Transistor for Actuator Applications

2019 ◽  
Vol 11 (14) ◽  
pp. 31-39 ◽  
Author(s):  
Abbas Jamshidi-Roudbari ◽  
Po-Chin Kuo ◽  
Miltiadis Hatalis
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor

High voltage polycrystalline thin-film transistor with variable doping slots in the offset region

2002 ◽  
Vol 80 (12) ◽  
pp. 2192-2194 ◽  
Author(s):  
Y. Z. Xu ◽  
R. Cross ◽  
Meenakshi Manhas ◽  
F. J. Clough ◽  
M. M. DeSouza ◽  
...  
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Polycrystalline Thin Film

Selective formation of cubic or tetragonal zirconia thin films of transparent, with no use of metal ion stabilizer by heating molecular precursor films under mild conditions

2021 ◽  
Vol 14 (02) ◽  
pp. 2151012
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Metal Ion ◽  
Tetragonal Zirconia ◽  
Precursor Film ◽  
Quartz Glass Substrate ◽  
Molecular Precursor ◽  
Zirconia Thin Film

Cubic or tetragonal zirconia thin films of transparent and 100 nm thickness were selectively formed on a quartz glass substrate by heat-treating the molecular precursor films involving Zr(IV) complexes of nitrilotriacetic acid, at 500[Formula: see text]C in air for 1 h. A precursor solution was prepared by a reaction of the ligand and zirconium tetrabutoxide in alcohol under the presence of butylamine. By the addition of H2O2 or H2O into the solution, the spin-coated precursor films were converted to cubic zirconia thin films by the abovementioned procedure. Further, the identical phase was produced also in the case of the electro-sprayed precursor film which was formed by an addition of H2O2 into the solution. On the other hand, the tetragonal zirconia thin film was obtained from a precursor film formed by using a solution dissolving the original Zr(IV) complex of the ligand, without H2O2 nor H2O. The crystal structure of all thin films was determined by using both the X-ray diffraction (XRD) patterns and Raman spectra. Thus, the zirconia thin films of both crystals could be facilely and selectively obtained with no use of hetero-metal ion stabilizers. The XPS spectra of the thin films show that the O/Zr ratio of the cubic phase is 1.37 and slightly larger than tetragonal one (1.29), and also demonstrate that the nitrogen atoms, which may contribute to stabilize these metastable phases at room temperature, of about 5−7 atomic% was remained in the resultant thin films. The adhesion strengths of cubic zirconia thin film onto the quartz glass substrate was 68 MPa and larger than that of tetragonal one, when the precursor films were formed via a spin coating process. The optical and surface properties of the thin films were also examined in relation to the crystal systems.

Solution-processed amorphous yttrium aluminium oxide YAlxOy and aluminum oxide AlxOy, and their functional dielectric properties and performance in thin-film transistors

2020 ◽  
Vol 8 (25) ◽  
pp. 8521-8530 ◽  
Author(s):  
Nico Koslowski ◽  
Vanessa Trouillet ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Single Source ◽  
Yttrium Aluminium ◽  
Single Source Precursor ◽  
Deep Uv ◽  
And Performance ◽  
Amorphous Dielectric

Yttrium aluminium oxide (YAlxOy) dielectric is accessible using a molecular single-source precursor approach. Processing using deep UV leads to a functional amorphous dielectric with functionality in a thin-film transistor device.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

2020 ◽  
Vol 124 (49) ◽  
pp. 26780-26792
Author(s):  
Jun Shik Kim ◽  
Younjin Jang ◽  
Sukin Kang ◽  
Yonghee Lee ◽  
Kwangmin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Oxide Thin Films ◽  
Zinc Tin Oxide ◽  
Dependent Growth
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