New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties

2019 ◽  
Vol 21 (23) ◽  
pp. 12494-12504 ◽  
Author(s):  
Evgenyi Yakimchuk ◽  
Vladimir Volodin ◽  
Irina Antonova
Keyword(s):  
Electrical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Optical And Electrical Properties ◽  
Leakage Currents ◽  
Breakdown Electric Field ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

G-NMP is a high-k dielectric with a permittivity of 7–9, low leakage currents of 107–108 A cm−2, an ultralow charge of −(1–4) × 1010 cm−2 and a breakdown electric field strength of (2–3) × 105 V cm−1.

Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

2007 ◽  
Vol 995 ◽  
Author(s):  
Sagnik Dey ◽  
Se-Hoon Lee ◽  
Sachin V. Joshi ◽  
Prashant Majhi ◽  
Sanjay K. Banerjee
Keyword(s):  
Metal Gate ◽  
Leakage Currents ◽  
Drive Current ◽  
Fully Depleted ◽  
Low Leakage ◽  
High Drive ◽  
High K ◽  
High K Dielectric

AbstractA MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

scholarly journals An Empirical Relation for Vegetation Fuel Flames Breakdown Electric Field Strength

2019 ◽  
Vol 11 (11) ◽  
pp. 187-202
Author(s):  
Kago Ernest Maabong ◽  
Kgakgamatso Mphale ◽  
Douglas Letsholathebe ◽  
Samuel Chimidza ◽  
Phenyo Thebenyane
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Empirical Relation ◽  
Breakdown Electric Field
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