Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

AbstractA MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

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0.525μm>sup<2>/sup<6T-SRAM Bit Cell using 45nm Fully-Depleted SOI CMOS Technology with Metal gate, High K Dielectric and Elevated Source/Drain on 300mm wafers.

2005 IEEE International SOI Conference Proceedings ◽

10.1109/soi.2005.1563595 ◽

2006 ◽

Cited By ~ 1

Author(s):

A. Vandooren ◽

C. Hobbs ◽

M. Aminpur ◽

G. Chabanne ◽

A. Wild ◽

...

Keyword(s):

Cmos Technology ◽

Metal Gate ◽

Fully Depleted ◽

High K ◽

High K Dielectric ◽

Elevated Source ◽

Soi Cmos

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Fully-depleted SOI CMOS technology using WXN metal gate and HfSixOyNZ high-k dielectric

ESSDERC 2007 - 37th European Solid State Device Research Conference ◽

10.1109/essderc.2007.4430926 ◽

2007 ◽

Author(s):

D. Aime ◽

C. Fenouillet-Beranger ◽

P. Perreau ◽

S. Denorme ◽

J. Coignus ◽

...

Keyword(s):

Cmos Technology ◽

Metal Gate ◽

Fully Depleted ◽

High K ◽

High K Dielectric ◽

Soi Cmos

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New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties

Physical Chemistry Chemical Physics ◽

10.1039/c9cp01612k ◽

2019 ◽

Vol 21 (23) ◽

pp. 12494-12504 ◽

Cited By ~ 1

Author(s):

Evgenyi Yakimchuk ◽

Vladimir Volodin ◽

Irina Antonova

Keyword(s):

Electrical Properties ◽

Field Strength ◽

Electric Field ◽

Electric Field Strength ◽

Optical And Electrical Properties ◽

Leakage Currents ◽

Breakdown Electric Field ◽

Low Leakage ◽

High K ◽

High K Dielectric

G-NMP is a high-k dielectric with a permittivity of 7–9, low leakage currents of 107–108 A cm−2, an ultralow charge of −(1–4) × 1010 cm−2 and a breakdown electric field strength of (2–3) × 105 V cm−1.

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Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories

MRS Proceedings ◽

10.1557/proc-1071-f02-09 ◽

2008 ◽

Vol 1071 ◽

Cited By ~ 1

Author(s):

Chia-Han Yang ◽

Yue Kuo ◽

Chen-Han Lin ◽

Rui Wan ◽

Way Kuo

Keyword(s):

Nonvolatile Memory ◽

Storage Capacity ◽

Breakdown Strength ◽

Charge Storage ◽

Leakage Currents ◽

Low Leakage ◽

Nonvolatile Memories ◽

High K ◽

Memory Characteristics ◽

Large Charge

AbstractSemiconducting or metallic nanocrystals embedded high-k films have been investigated. They showed promising nonvolatile memory characteristics, such as low leakage currents, large charge storage capacities, and long retention times. Reliability of four different kinds of nanocrystals, i.e., nc- Ru, -ITO, -Si and -ZnO, embedded Zr-doped HfO2 high-k dielectrics have been studied. All of them have higher relaxation currents than the non-embedded high-k film has. The decay rate of the relaxation current is in the order of nc-ZnO > nc-ITO > nc-Si > nc-Ru. When the relaxation currents of the nanocrystals embedded samples were fitted to the Curie-von Schweidler law, the n values were between 0.54 and 0.77, which are much lower than that of the non embedded high-k sample. The nanocrystals retain charges in two different states, i.e., deeply and loosely trapped. The ratio of these two types of charges was estimated. The charge storage capacity and holding strength are strongly influenced by the type of material of the embedded nanocrystals. The nc-ZnO embedded film holds trapped charges longer than other embedded films do. The ramp-relax result indicates that the breakdown of the embedded film came from the breakdown of the bulk high-k film. The type of nanocrystal material influences the breakdown strength.

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