The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties

2019 ◽  
Vol 21 (23) ◽  
pp. 12494-12504 ◽  
Author(s):  
Evgenyi Yakimchuk ◽  
Vladimir Volodin ◽  
Irina Antonova
Keyword(s):  
Electrical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Optical And Electrical Properties ◽  
Leakage Currents ◽  
Breakdown Electric Field ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

G-NMP is a high-k dielectric with a permittivity of 7–9, low leakage currents of 107–108 A cm−2, an ultralow charge of −(1–4) × 1010 cm−2 and a breakdown electric field strength of (2–3) × 105 V cm−1.

scholarly journals ELECTRODELESS MEASUREMENT TECHNIQUE OF COMPLEX DIELECTRIC PERMITTIVITY OF HIGH-K DIELECTRIC FILMS IN THE MILLIMETER WAVELENGTH RANGE

2016 ◽  
Vol 52 ◽  
pp. 161-167 ◽  
Author(s):  
Igor V. Kotelnikov ◽  
Andrey G. Altynnikov ◽  
Anatoly Konstantinovich Mikhailov ◽  
Valentina V. Medvedeva ◽  
Andrey Kozyrev
Keyword(s):  
Dielectric Permittivity ◽  
Wavelength Range ◽  
Measurement Technique ◽  
Complex Dielectric Permittivity ◽  
Dielectric Films ◽  
Millimeter Wavelength ◽  
High K ◽  
High K Dielectric

Modelling the Deposition of High-k Dielectric Films by First Principles

2004 ◽  
Vol 13 (1-3) ◽  
pp. 117-120 ◽  
Author(s):  
Simon D. Elliott ◽  
Henry P. Pinto
Keyword(s):  
First Principles ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

2007 ◽  
Vol 134 ◽  
pp. 379-382
Author(s):  
Claire Therese Richard ◽  
D. Benoit ◽  
S. Cremer ◽  
L. Dubost ◽  
B. Iteprat ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Copper Oxide ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
3D Structure ◽  
Wet Process ◽  
High K ◽  
3D Architecture ◽  
High K Dielectric ◽  
Mim Capacitors

3D architecture is an alternative way to high-k dielectric to increase the capacitance of MIM structure. However, the top of this kind of structure is very sensitive to defectivity and then requires a special wet treatment. In this paper, we present the process flow for a 3D MIM integration in a CMOS copper back-end and a two steps wet process which provides very good electrical performances, i.e. leakage current lower than 10-9A.cm-2 at 5V / 125°C and breakdown voltage higher than 20V. At first, a SC1 step is done for electrode isolation improvement by material etching with good selectivity towards dielectric: that’s the electrode recess. In the second time, a HF step is done for copper oxide dilution and residues removal from the top of the 3D structure.

Epitaxial Praseodymium Oxide: A New High-K Dielectric

2002 ◽  
Vol 744 ◽  
Author(s):  
H. J. Osten ◽  
E. Bugiel ◽  
A. Fissel
Keyword(s):  
Electrical Breakdown ◽  
Band Alignment ◽  
Cmos Process ◽  
Praseodymium Oxide ◽  
Good Reliability ◽  
Molecular Beam Epitaxial ◽  
Conduction Band Offset ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K Dielectric

ABSTRACTWe show results for molecular beam epitaxial (MBE) growth of praseodymium oxide on Si. On Si(100) oriented surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(111). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(OOl) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.

Multiferroic Bi0.7Dy0.3FeO3 films as high k dielectric material for advanced non-volatile memory devices

2009 ◽  
Vol 45 (16) ◽  
pp. 821 ◽  
Author(s):  
K. Prashanthi ◽  
S.P. Duttagupta ◽  
R. Pinto ◽  
V.R. Palkar
Keyword(s):  
Dielectric Material ◽  
Memory Devices ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Sign in / Sign up

Export Citation Format

Share Document