Visualization of regulated nucleation and growth of lithium sulfides for high energy lithium sulfur batteries

2019 ◽  
Vol 12 (10) ◽  
pp. 3144-3155 ◽  
Author(s):  
Zheng-Long Xu ◽  
Sung Joo Kim ◽  
Donghee Chang ◽  
Kyu-Young Park ◽  
Kyun Seong Dae ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Nucleation And Growth ◽  
Transmission Electron ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

The nucleation and growth of lithium sulfides are directly observed by liquid in situ transmission electron microscopy.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Reactions in Metal-Metalloid Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Reactive Systems ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Compound Formation ◽  
Transmission Electron

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.

Progress in environmental high-voltage transmission electron microscopy for nanomaterials

2020 ◽  
Vol 378 (2186) ◽  
pp. 20190602
Author(s):  
Nobuo Tanaka ◽  
Takeshi Fujita ◽  
Yoshimasa Takahashi ◽  
Jun Yamasaki ◽  
Kazuyoshi Murata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Voltage ◽  
High Energy ◽  
Transmission Electron ◽  
Recent Developments ◽  
In Situ Observations ◽  
High Voltage Transmission ◽  
And Function

A new environmental high-voltage transmission electron microscope (E-HVEM) was developed by Nagoya University in collaboration with JEOL Ltd. An open-type environmental cell was employed to enable in-situ observations of chemical reactions on catalyst particles as well as mechanical deformation in gaseous conditions. One of the reasons for success was the application of high-voltage transmission electron microscopy to environmental (in-situ) observations in the gas atmosphere because of high transmission of electrons through gas layers and thick samples. Knock-on damages to samples by high-energy electrons were carefully considered. In this paper, we describe the detailed design of the E-HVEM, recent developments and various applications. This article is part of a discussion meeting issue ‘Dynamic in situ microscopy relating structure and function'.

Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Carbonaceous Material ◽  
High Energy ◽  
Wafer Surface ◽  
Hydrogen Treatment ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

Initial Oxidation Kinetics of Cu(100), (110), and (111) Thin Films Investigated by in Situ Ultra-high-vacuum Transmission Electron Microscopy

2005 ◽  
Vol 20 (7) ◽  
pp. 1684-1694 ◽  
Author(s):  
Guangwen Zhou ◽  
Judith C. Yang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Diffusion ◽  
High Vacuum ◽  
Nucleation And Growth ◽  
Ultra High Vacuum ◽  
Initial Oxidation ◽  
Transmission Electron ◽  
Oxygen Surface

The initial oxidation stages of Cu(100), (110), and (111) surfaces have been investigated by using in situ ultra-high-vacuum transmission electron microscopy (TEM) techniques to visualize the nucleation and growth of oxide islands. The kinetic data on the nucleation and growth of oxide islands shows a highly enhanced initial oxidation rate on the Cu(110) surface as compared with Cu(100), and it is found that the dominant mechanism for the nucleation and growth is oxygen surface diffusion in the oxidation of Cu(100) and (110). The oxidation of Cu(111) shows a dramatically different behavior from that of the other two orientations, and the in situ TEM observation reveals that the initial stages of Cu(111) oxidation are dominated by the nucleation of oxide islands at temperatures lower than 550 °C, and are dominated by two-dimensional oxide growth at temperatures higher than 550 °C. This dependence of the oxidation behavior on the crystal orientation and temperature is attributed to the structures of the oxygen-chemisorbed layer, oxygen surface diffusion, surface energy, and the interfacial strain energy.

Nucleation Phenomena during Titanium Silicon Reaction

1989 ◽  
Vol 146 ◽  
Author(s):  
Ivo J.M.M. Raaijmakers ◽  
Leo J. van Ijzendoorn ◽  
Anton M.L. Theunissen ◽  
Ki-Bum Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
Diffusion Control ◽  
Transmission Electron ◽  
First Results ◽  
Titanium Silicon

ABSTRACTIt is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.

Nucleation Dynamics of Water Nanodroplets

2014 ◽  
Vol 20 (2) ◽  
pp. 407-415 ◽  
Author(s):  
Dipanjan Bhattacharya ◽  
Michel Bosman ◽  
Venkata R.S.S. Mokkapati ◽  
Fong Yew Leong ◽  
Utkur Mirsaidov
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gold Nanoparticles ◽  
Heterogeneous Nucleation ◽  
Flat Surface ◽  
Nucleation And Growth ◽  
Length Scale ◽  
Transmission Electron ◽  
Nucleation Sites

AbstractThe origin of the condensation of water begins at the nanoscale, a length-scale that is challenging to probe for liquids. In this work we directly image heterogeneous nucleation of water nanodroplets by in situ transmission electron microscopy. Using gold nanoparticles bound to a flat surface as heterogeneous nucleation sites, we observe nucleation and growth of water nanodroplets. The growth of nanodroplet radii follows the power law: R(t)~(t−t0)β, where β~0.2−0.3.

In Liquid Observation and Quantification of Nucleation and Growth of Gold Nanostructures Using in Situ Transmission Electron Microscopy

2017 ◽  
Vol 121 (13) ◽  
pp. 7435-7441 ◽  
Author(s):  
Jie Yang ◽  
Carmen M. Andrei ◽  
Gianluigi A. Botton ◽  
Leyla Soleymani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Gold Nanostructures ◽  
Transmission Electron
Sign in / Sign up

Export Citation Format

Share Document