Progress in environmental high-voltage transmission electron microscopy for nanomaterials

2020 ◽  
Vol 378 (2186) ◽  
pp. 20190602
Author(s):  
Nobuo Tanaka ◽  
Takeshi Fujita ◽  
Yoshimasa Takahashi ◽  
Jun Yamasaki ◽  
Kazuyoshi Murata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Voltage ◽  
High Energy ◽  
Transmission Electron ◽  
Recent Developments ◽  
In Situ Observations ◽  
High Voltage Transmission ◽  
And Function

A new environmental high-voltage transmission electron microscope (E-HVEM) was developed by Nagoya University in collaboration with JEOL Ltd. An open-type environmental cell was employed to enable in-situ observations of chemical reactions on catalyst particles as well as mechanical deformation in gaseous conditions. One of the reasons for success was the application of high-voltage transmission electron microscopy to environmental (in-situ) observations in the gas atmosphere because of high transmission of electrons through gas layers and thick samples. Knock-on damages to samples by high-energy electrons were carefully considered. In this paper, we describe the detailed design of the E-HVEM, recent developments and various applications. This article is part of a discussion meeting issue ‘Dynamic in situ microscopy relating structure and function'.

scholarly journals In Situ Observation of Liquid Solder Alloys and Solid Substrate Reactions Using High-Voltage Transmission Electron Microscopy

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 510
Author(s):  
Xin F. Tan ◽  
Flora Somidin ◽  
Stuart D. McDonald ◽  
Michael J. Bermingham ◽  
Hiroshi Maeno ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Voltage ◽  
Ex Situ ◽  
In Situ Observation ◽  
Liquid Solder ◽  
Solder Alloys ◽  
Transmission Electron ◽  
High Voltage Transmission

The complex reaction between liquid solder alloys and solid substrates has been studied ex-situ in a few studies, utilizing creative setups to “freeze” the reactions at different stages during the reflow soldering process. However, full understanding of the dynamics of the process is difficult due to the lack of direct observation at micro- and nano-meter resolutions. In this study, high voltage transmission electron microscopy (HV-TEM) is employed to observe the morphological changes that occur in Cu6Sn5 between a Sn-3.0 wt%Ag-0.5 wt%Cu (SAC305) solder alloy and a Cu substrate in situ at temperatures above the solidus of the alloy. This enables the continuous surveillance of rapid grain boundary movements of Cu6Sn5 during soldering and increases the fundamental understanding of reaction mechanisms in solder solid/liquid interfaces.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Visualization of regulated nucleation and growth of lithium sulfides for high energy lithium sulfur batteries

2019 ◽  
Vol 12 (10) ◽  
pp. 3144-3155 ◽  
Author(s):  
Zheng-Long Xu ◽  
Sung Joo Kim ◽  
Donghee Chang ◽  
Kyu-Young Park ◽  
Kyun Seong Dae ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Nucleation And Growth ◽  
Transmission Electron ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

The nucleation and growth of lithium sulfides are directly observed by liquid in situ transmission electron microscopy.

Detection efficiency and estimation of the performance of high voltage STEM

1978 ◽  
Vol 36 (1) ◽  
pp. 84-85
Author(s):  
A. Ishikawa ◽  
C. Morita ◽  
M. Hibino ◽  
S. Maruse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
High Voltage ◽  
Detection Efficiency ◽  
Beam Current ◽  
High Energy ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Transmission Electron

One of the problems which are met in conventional transmission electron microscopy (CTEM) at high voltages is the reduction of the sensitivity of photographic films for high energy electron beams, resulting in the necessity of using high beam current. This cancels out an advantage of high voltage electron microscopy which is otherwise expected from the reduction of the inelastic scattering in the specimen, that is the reduced radiation damage of the specimen during observations. However, it is expected that the efficiency of the detector of scanning transmission electron microscopy (STEM) can be superior to that of CTEM, since the divergence of the electron beam in the detecting material does not affect the quality of the image. In addition to observation with less radiation damage, high voltage STEM with high detection efficiency is very attractive for observations of weak contrast objects since the enhancement of the contrast (which is an important advantage of STEM) is easily realized electrically.

Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Carbonaceous Material ◽  
High Energy ◽  
Wafer Surface ◽  
Hydrogen Treatment ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

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