Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23459-23474 ◽  
Author(s):  
Taki Eddine Taouririt ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Marwa Adaika ◽  
Slimane Chala ◽  
...  

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

2019 ◽  
Vol 19 (3) ◽  
pp. 1470-1473 ◽  
Author(s):  
Yooseong Lim ◽  
Namgyung Hwang ◽  
Jeongsuk Lee ◽  
Sehyeong Lee ◽  
Moonsuk Yi

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 53310-53318 ◽  
Author(s):  
Da Eun Kim ◽  
Sung Woon Cho ◽  
Bora Kim ◽  
Jae Hui Shin ◽  
Won Jun Kang ◽  
...  

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.


AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang

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