Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey
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High K
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This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.
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2019 ◽
Vol 19
(3)
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pp. 1470-1473
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2018 ◽
Vol 7
(7)
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pp. Q3049-Q3053
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