High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric
2010 ◽
Vol 157
(12)
◽
pp. H1110
◽
Keyword(s):
Keyword(s):
2005 ◽
Vol 483-485
◽
pp. 841-844
◽
Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
2014 ◽
Vol 301
◽
pp. 358-362
◽
Keyword(s):
2011 ◽
Vol 50
(1S2)
◽
pp. 01BG05
◽
2011 ◽
Vol 50
◽
pp. 01BG05
◽