Surface modification of garnet with amorphous SnO2via atomic layer deposition

2020 ◽  
Vol 8 (35) ◽  
pp. 18087-18093
Author(s):  
Bin Tang ◽  
Longxue Gao ◽  
Junqing Liu ◽  
Shou-Hang Bo ◽  
Zhaojun Xie ◽  
...  
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Solid Electrolytes ◽  
High Stability ◽  
Atomic Layer ◽  
Interfacial Resistance ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Metallic Lithium

We sputter amorphous SnO2 layer onto the surface of solid electrolytes via atomic layer deposition, which reduces interfacial resistance, prevents interface reactions with metallic lithium and provides high stability for long cycling.

Surface Modification of Carbon Post Arrays by Atomic Layer Deposition of ZnO Film

2011 ◽  
Vol 11 (8) ◽  
pp. 7322-7326 ◽  
Author(s):  
Hyun Ae Lee ◽  
Young-Chul Byun ◽  
Umesh Singh ◽  
Hyoung J. Cho ◽  
Hyoungsub Kim
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Film ◽  
Layer Deposition

Atomic layer deposition-triggered hierarchical core/shell stable bifunctional electrocatalysts for overall water splitting

2021 ◽  
Vol 9 (37) ◽  
pp. 21132-21141
Author(s):  
T. Kavinkumar ◽  
Selvaraj Seenivasan ◽  
Hyeonjung Jung ◽  
Jeong Woo Han ◽  
Do-Heyoung Kim
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Core Shell ◽  
Interface Engineering ◽  
Bifunctional Electrocatalyst ◽  
Overall Water Splitting ◽  
Bifunctional Electrocatalysts ◽  
Layer Deposition

A synergistic strategy of interface engineering and surface modification is efficient to construct a promising bifunctional electrocatalyst for enhanced electrocatalytic water splitting.

Improving Powder Characteristics by Surface Modification Using Atomic Layer Deposition

2019 ◽  
Vol 23 (11) ◽  
pp. 2362-2368 ◽  
Author(s):  
Cosima Hirschberg ◽  
Nikolaj Sølvkær Jensen ◽  
Johan Boetker ◽  
Anders Østergaard Madsen ◽  
Tommi O. Kääriäinen ◽  
...  
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Powder Characteristics

scholarly journals Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

2021 ◽  
Author(s):  
Jerome W. F. Innocent ◽  
Mari Napari ◽  
Andrew L. Johnson ◽  
Thom R. Harris-Lee ◽  
Miriam Regue ◽  
...  
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Layer Deposition ◽  
Scale Surface

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor.

Surface modification and fabrication of 3D nanostructures by atomic layer deposition

MRS Bulletin ◽  
2011 ◽  
Vol 36 (11) ◽  
pp. 887-897 ◽  
Author(s):  
Changdeuck Bae ◽  
Hyunjung Shin ◽  
Kornelius Nielsch
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
3D Nanostructures ◽  
Layer Deposition ◽  
Image Position

Abstract

Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Flat Band ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.

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