Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices

2019 ◽  
Vol 7 (33) ◽  
pp. 10203-10210 ◽  
Author(s):  
Ruopeng Wang ◽  
Huilin Li ◽  
Luhong Zhang ◽  
Yu-Jia Zeng ◽  
Ziyu Lv ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Memory Device ◽  
Graphitic Carbon Nitride ◽  
Memory Devices ◽  
Characteristic P ◽  
Switching Characteristic ◽  
Solution Processed ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Carbon Nitride Nanosheets

A memory device is demonstrated based on g-C3N4 nanosheets with a non-volatile behavior and a bipolar switching characteristic.

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

Enhanced peroxidase-like activity of AuNPs loaded graphitic carbon nitride nanosheets for colorimetric biosensing

2019 ◽  
Vol 1091 ◽  
pp. 69-75 ◽  
Author(s):  
Na Wu ◽  
Yi-Ting Wang ◽  
Xiao-Yan Wang ◽  
Feng-Na Guo ◽  
Hui Wen ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Graphitic Carbon ◽  
Graphitic Carbon Nitride ◽  
Carbon Nitride Nanosheets ◽  
Colorimetric Biosensing

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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