A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

Journal of Materials Chemistry C ◽

10.1039/c9tc03718g ◽

2019 ◽

Vol 7 (39) ◽

pp. 12075-12079 ◽

Author(s):

Dingbo Chen ◽

Zhikun Liu ◽

Jinghan Liang ◽

Lijun Wan ◽

Zhuoliang Xie ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gan Hemt ◽

High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

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High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2309 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2309-2311 ◽

Author(s):

Shuichi Yagi ◽

Mitsuaki Shimizu ◽

Hajime Okumura ◽

Hiromichi Ohashi ◽

Yoshiki Yano ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Chinese Physics B ◽

10.1088/1674-1056/23/7/077304 ◽

2014 ◽

Vol 23 (7) ◽

pp. 077304 ◽

Author(s):

Min-Han Mi ◽

Kai Zhang ◽

Xing Chen ◽

Sheng-Lei Zhao ◽

Chong Wang ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage ◽

Double Heterojunction ◽

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Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04df02 ◽

2012 ◽

Vol 51 ◽

pp. 04DF02 ◽

Author(s):

Qi Zhou ◽

Hongwei Chen ◽

Chunhua Zhou ◽

Zhihong Feng ◽

Shujun Cai ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications

Acta Physica Sinica ◽

10.7498/aps.66.247302 ◽

2017 ◽

Vol 66 (24) ◽

pp. 247302

Author(s):

Zhang Li ◽

Lin Zhi-Yu ◽

Luo Jun ◽

Wang Shu-Long ◽

Zhang Jin-Cheng ◽

...

Keyword(s):

Buffer Layer ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage

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Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l1168 ◽

2006 ◽

Vol 45 (No. 44) ◽

pp. L1168-L1170 ◽

Author(s):

Yuji Ohmaki ◽

Masashi Tanimoto ◽

Shiro Akamatsu ◽

Takashi Mukai

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

High Breakdown Voltage ◽

State Resistance

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High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.124772 ◽

1999 ◽

Vol 75 (11) ◽

pp. 1616-1618 ◽

Author(s):

Y. S. Lin ◽

W. C. Hsu ◽

C. H. Wu ◽

W. Lin ◽

R. T. Hsu

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage

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Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04df02 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DF02

Author(s):

Qi Zhou ◽

Hongwei Chen ◽

Chunhua Zhou ◽

Zhihong Feng ◽

Shujun Cai ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1518 ◽

2014 ◽

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

Analytical Methods ◽

10.1039/c9ay01019j ◽

2019 ◽

Vol 11 (31) ◽

pp. 3981-3986 ◽

Author(s):

Lei Zhao ◽

Xinsheng Liu ◽

Bin Miao ◽

Zhiqi Gu ◽

Jin Wang ◽

...

Keyword(s):

Real Time ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gan Hemt ◽

Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

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