Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

2004 ◽  
Vol 43 (4B) ◽  
pp. 2239-2242 ◽  
Author(s):  
Wataru Saito ◽  
Yoshiharu Takada ◽  
Masahiko Kuraguchi ◽  
Kunio Tsuda ◽  
Ichiro Omura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Plate Structure ◽  
Field Plate ◽  
High Breakdown Voltage

scholarly journals Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

2018 ◽  
Vol 8 (6) ◽  
pp. 974 ◽  
Author(s):  
Hyeon-Tak Kwak ◽  
Seung-Bo Chang ◽  
Hyun-Jung Kim ◽  
Kyu-Won Jang ◽  
Hyung Yoon ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Plate Structure ◽  
Field Plate ◽  
Operational Improvement

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

2019 ◽  
Vol 7 (39) ◽  
pp. 12075-12079 ◽  
Author(s):  
Dingbo Chen ◽  
Zhikun Liu ◽  
Jinghan Liang ◽  
Lijun Wan ◽  
Zhuoliang Xie ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

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