High hole mobility in room temperature discotic liquid crystalline tetrathienoanthracenes

2020 ◽  
Vol 56 (42) ◽  
pp. 5629-5632 ◽  
Author(s):  
Indu Bala ◽  
Joydip De ◽  
Santosh Prasad Gupta ◽  
Harpreet Singh ◽  
Upendra Kumar Pandey ◽  
...  

Tetrathienoanthracene (TTA), a new discotic core fragment, is explored that shows a remarkably high hole mobility (μh) of 4.22 cm2 V−1 s−1 at room temperature when used in space-charge limited current (SCLC) devices.

2015 ◽  
Vol 68 (11) ◽  
pp. 1741 ◽  
Author(s):  
Leanne Murphy ◽  
Bin Sun ◽  
Wei Hong ◽  
Hany Aziz ◽  
Yuning Li

We studied the vertical and lateral charge transport characteristics of a diketopyrrolopyrrole polymer donor (D)–PC61BM acceptor (A) system by measuring the space charge limited current (SCLC) mobility and field-effect mobility respectively. It was found that with an increase in annealing temperature, the SCLC hole mobility decreased for the pure polymer (PDBFBT) but increased for the PDBFBT:PC61BM blends, which could be explained by changes in the crystallinity and crystal orientation (edge-on versus face-on). The pure PDBFBT and most blend films showed the maximum field-effect hole mobility (µh) when annealed at 100°C, which then declined as the annealing temperature was further increased. Surprisingly, the D/A = 1/1 blend films annealed at high temperatures exhibited an abrupt increase in the field-effect µh. This unusual phenomenon was interpreted by the antiplasticization effect of PC61BM, which promoted the molecular organization of the polymer. The effect of annealing on the carrier mobility was further correlated with the performance of inverted organic solar cell devices with the PDBFBT:PC61BM blend (D/A = 1/3). Thermal annealing at high temperatures (>100°C) was found to obstruct electron transport and cause the device performance to significantly deteriorate.


1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.


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