scholarly journals Measurement of the hole mobility in the blend system by space charge limited current

2012 ◽  
Vol 61 (8) ◽  
pp. 087204
Author(s):  
Yu Huang-Zhong
Keyword(s):  
Space Charge ◽  
Hole Mobility ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Measurement of hole mobility in P3HT based photovoltaic cell using space charge limited current method

2019 ◽  
Author(s):  
K. L. Usha Kumary ◽  
M. Pratheek ◽  
T. A. Shahul Hameed ◽  
P. Predeep
Keyword(s):  
Space Charge ◽  
Hole Mobility ◽  
Current Method ◽  
Photovoltaic Cell ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

High hole mobility in room temperature discotic liquid crystalline tetrathienoanthracenes

2020 ◽  
Vol 56 (42) ◽  
pp. 5629-5632 ◽  
Author(s):  
Indu Bala ◽  
Joydip De ◽  
Santosh Prasad Gupta ◽  
Harpreet Singh ◽  
Upendra Kumar Pandey ◽  
...  
Keyword(s):  
Space Charge ◽  
Liquid Crystalline ◽  
Room Temperature ◽  
Hole Mobility ◽  
Space Charge Limited Current ◽  
Core Fragment ◽  
Limited Current ◽  
Space Charge Limited

Tetrathienoanthracene (TTA), a new discotic core fragment, is explored that shows a remarkably high hole mobility (μh) of 4.22 cm2 V−1 s−1 at room temperature when used in space-charge limited current (SCLC) devices.

Study of Vertical and Lateral Charge Transport Properties of DPP-Based Polymer/PC61BM Films Using Space Charge Limited Current (SCLC) and Field Effect Transistor Methods and their Effects on Photovoltaic Characteristics

2015 ◽  
Vol 68 (11) ◽  
pp. 1741 ◽  
Author(s):  
Leanne Murphy ◽  
Bin Sun ◽  
Wei Hong ◽  
Hany Aziz ◽  
Yuning Li
Keyword(s):  
Space Charge ◽  
Charge Transport ◽  
High Temperatures ◽  
Field Effect ◽  
Annealing Temperature ◽  
Hole Mobility ◽  
Space Charge Limited Current ◽  
Blend Films ◽  
Limited Current ◽  
Space Charge Limited

We studied the vertical and lateral charge transport characteristics of a diketopyrrolopyrrole polymer donor (D)–PC61BM acceptor (A) system by measuring the space charge limited current (SCLC) mobility and field-effect mobility respectively. It was found that with an increase in annealing temperature, the SCLC hole mobility decreased for the pure polymer (PDBFBT) but increased for the PDBFBT:PC61BM blends, which could be explained by changes in the crystallinity and crystal orientation (edge-on versus face-on). The pure PDBFBT and most blend films showed the maximum field-effect hole mobility (µh) when annealed at 100°C, which then declined as the annealing temperature was further increased. Surprisingly, the D/A = 1/1 blend films annealed at high temperatures exhibited an abrupt increase in the field-effect µh. This unusual phenomenon was interpreted by the antiplasticization effect of PC61BM, which promoted the molecular organization of the polymer. The effect of annealing on the carrier mobility was further correlated with the performance of inverted organic solar cell devices with the PDBFBT:PC61BM blend (D/A = 1/3). Thermal annealing at high temperatures (>100°C) was found to obstruct electron transport and cause the device performance to significantly deteriorate.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space charge limited current in an insulator at high fields

1980 ◽  
Vol 16 (23) ◽  
pp. 896 ◽  
Author(s):  
Y.K. Sharma
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
High Fields ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

Space‐charge‐limited current flow in a spherical double sheath

1986 ◽  
Vol 60 (7) ◽  
pp. 2280-2284 ◽  
Author(s):  
Ronghua Wei ◽  
Paul J. Wilbur
Keyword(s):  
Space Charge ◽  
Current Flow ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Electron Trapping in Neutron‐Irradiated Silicon Studied by Space‐Charge‐Limited Current

1972 ◽  
Vol 43 (6) ◽  
pp. 2755-2762 ◽  
Author(s):  
Vu Thuong Quat ◽  
Marc‐A. Nicolet
Keyword(s):  
Space Charge ◽  
Electron Trapping ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited
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