Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using HfxZr1−xO2 thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.