High performance flexible memristors based on a lead free AgBiI4 perovskite with an ultralow operating voltage

2020 ◽  
Vol 8 (40) ◽  
pp. 14155-14163
Author(s):  
Haibo Ye ◽  
Bo Sun ◽  
Ziyi Wang ◽  
Zhiyong Liu ◽  
Xuning Zhang ◽  
...  

Lead-free inorganic perovskite materials exhibit excellent memristive properties, such as high ON/OFF ratio and low switching voltage.

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.


2020 ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li

Abstract In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offers higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve a high-performance, self-powered and stabilized photodetectors with fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.


2021 ◽  
Vol 5 (1) ◽  
pp. 219-229
Author(s):  
Yassine Raoui ◽  
Hamid Ez-Zahraouy ◽  
Shahzada Ahmad ◽  
Samrana Kazim

A theoretical roadmap for designing highly efficient inorganic lead and lead free based perovskite solar cells.


Author(s):  
Arthur Marronnier ◽  
Heejae Lee ◽  
Bernard Geffroy ◽  
Yvan Bonnassieux ◽  
Jacky Even ◽  
...  

Author(s):  
Xiang Li ◽  
Xinyuan Du ◽  
Peng Zhang ◽  
Yunqiu Hua ◽  
Lin Liu ◽  
...  

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.


RSC Advances ◽  
2021 ◽  
Vol 11 (19) ◽  
pp. 11663-11671
Author(s):  
Haixia Li ◽  
Weiwei Lin ◽  
Liang Ma ◽  
Yang Liu ◽  
Yu Wang ◽  
...  

The high performance photodetector based on CsPb(Br/I)3-NC/CdS-MW heterostructures showed broadband photodetection that covers UV-VIS-NIR range due to the charge transfer at the heterojunction interface and the absorption capability of CsPb(Br/I)3.


Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 717
Author(s):  
Hassan Algadi ◽  
Ahmad Umar ◽  
Hasan Albargi ◽  
Turki Alsuwian ◽  
Sotirios Baskoutas

A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate. The C-dot/perovskite bilayer heterojunction photodetector shows a high performance with a responsivity (R) of 1.09 A/W, almost five times higher than that of a CsPbBr3-based photodetector (0.21 A/W). In addition, the hybrid photodetector exhibits a fast response speed of 1.318/1.342 µs and a highly stable photocurrent of 6.97 µA at 10 V bias voltage. These figures of merits are comparable with, or much better than, most reported perovskite heterojunction photodetectors. UV–Vis absorption and photoluminescent spectra measurements reveal that the C-dot/perovskite bilayer heterojunction has a band gap similar to the pure perovskite layer, confirming that the absorption and emission in the bilayer heterojunction is dominated by the top layer of the perovskite. Moreover, the emission intensity of the C-dot/perovskite bilayer heterojunction is less than that of the pure perovskite layer, indicating that a significant number of charges were extracted by the C-dot layer. The studied band alignment of the C-dots and perovskites in the dark and under emission reveals that the photodetector has a highly efficient charge separation mechanism at the C-dot/perovskite interface, where the recombination rate between photogenerated electrons and holes is significantly reduced. This highly efficient charge separation mechanism is the main reason behind the enhanced performance of the C-dot/perovskite bilayer heterojunction photodetector.


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