scholarly journals Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong
Keyword(s):  
High Performance ◽  
Light Propagation ◽  
Light Emission ◽  
Review Article ◽  
Rapid Progress ◽  
Light Emitting ◽  
Materials Engineering ◽  
Perovskite Materials ◽  
Light Management ◽  
Photon Recycling

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.

scholarly journals High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structural Characteristics ◽  
Quantum Yields ◽  
Research Directions ◽  
Light Emitting ◽  
Perovskite Materials ◽  
Quantum Confinement Effects ◽  
Semiconducting Properties

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

Utilizing an effective framework to dye energy transfer in a carbazole-based metal–organic framework for high performance white light emission tuning

2018 ◽  
Vol 5 (11) ◽  
pp. 2868-2874 ◽  
Author(s):  
Yu-Pei Xia ◽  
Chen-Xue Wang ◽  
Lian-Cai An ◽  
Da-Shuai Zhang ◽  
Tong-Liang Hu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
White Light ◽  
High Performance ◽  
Light Emission ◽  
Metal Organic Framework ◽  
White Light Emission ◽  
Transfer Mechanism ◽  
Energy Transfer Mechanism ◽  
Light Emitting ◽  
Metal Organic

By introducing dyes into a MOF, a white-light-emitting luminophor was obtained based on effective framework to dye energy transfer mechanism.

scholarly journals Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Active Regions ◽  
Core Shell ◽  
Next Generation ◽  
Light Emitting ◽  
Full Color

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Eu3+/Eu2+/Tb3+ co-activated single-phase Gd2O2S: A high-performance white light emitting phosphor for light emitting diode

2021 ◽  
Vol 11 (1) ◽  
pp. 54-62
Author(s):  
Jinpeng Xie ◽  
Bonan Liu ◽  
Qingtao Qong ◽  
Zhicheng Xu ◽  
Zhiqiang Jin ◽  
...  
Keyword(s):  
White Light ◽  
High Performance ◽  
Single Phase ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Energy Transfer Mechanism ◽  
Excitation Spectra ◽  
Phosphor Material ◽  
Light Emitting ◽  
Co Doped

In this work, we report Eu3+/Tb3+/Eu2+ co-activated Gd2O2 S as novel phosphor materials that can be effectively applied in the white-light emitting diode based on a near-UV chip with sensational performances. The luminescent properties and energy transfer mechanism have been thoroughly investigated. The as-prepared europium/terbium co-doped Gd2O2 S phosphors exhibit strong fluorescence with tunable color output under UV-vis light excitation. Furthermore, a high response to ultraviolet illumination of 398 nm wavelength was observed in the excitation spectra, indicating an excellent match with a light-emitting-diode chip in the dominant emissions. It is found that a tricolor (blue, green and red) emission band which results in a white light emission can be acquired when Eu3+, Eu2+ and Tb3+ ions are all co-doped into the single phase Gd2O2S, and an optimum ion doping level (10 at.% Eu and 0.7 at.% Tb) can effectively emit nearly pure white color photoluminescence with lifetime effectively tuned from 0.55 ms to 1.10 ms. The CIE (Commission International de I'Eclairage 1931 chromaticity) is X = 0.3507, Y = 0.3029. It is therefore expected that the newly found phosphor material with high-performance properties possess great potentials for the future advanced white LED applications.

scholarly journals Advances and Challenges in Two-Dimensional Organic–Inorganic Hybrid Perovskites Toward High-Performance Light-Emitting Diodes

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Miao Ren ◽  
Sheng Cao ◽  
Jialong Zhao ◽  
Bingsuo Zou ◽  
Ruosheng Zeng
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Structural Diversity ◽  
Two Dimensional ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Perovskite Materials ◽  
Energy Funnel ◽  
Recent Developments ◽  
Low Efficiency

AbstractTwo-dimensional (2D) perovskites are known as one of the most promising luminescent materials due to their structural diversity and outstanding optoelectronic properties. Compared with 3D perovskites, 2D perovskites have natural quantum well structures, large exciton binding energy (Eb) and outstanding thermal stability, which shows great potential in the next-generation displays and solid-state lighting. In this review, the fundamental structure, photophysical and electrical properties of 2D perovskite films were illustrated systematically. Based on the advantages of 2D perovskites, such as special energy funnel process, ultra-fast energy transfer, dense film and low efficiency roll-off, the remarkable achievements of 2D perovskite light-emitting diodes (PeLEDs) are summarized, and exciting challenges of 2D perovskite are also discussed. An outlook on further improving the efficiency of pure-blue PeLEDs, enhancing the operational stability of PeLEDs and reducing the toxicity to push this field forward was also provided. This review provides an overview of the recent developments of 2D perovskite materials and LED applications, and outlining challenges for achieving the high-performance devices."Image missing"

Aggregation-enhanced emission active tetraphenylbenzene-cored efficient blue light emitter

2017 ◽  
Vol 196 ◽  
pp. 245-253 ◽  
Author(s):  
Lingzhi Li ◽  
Han Nie ◽  
Ming Chen ◽  
Jingzhi Sun ◽  
Anjun Qin ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Organic Light Emitting Diodes ◽  
Emission Characteristics ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Light Emitter ◽  
Organic Light

A tetraphenylbenzene (TPB) cored luminophore of TPB-AC with aggregation-enhanced emission characteristics was designed and synthesized. TPB-AC could be potentially applied for the fabrication of high performance organic light-emitting diodes (OLEDs) with blue light emission.

n-Type Diamond Growth by Phosphorus Doping

2007 ◽  
Vol 1039 ◽  
Author(s):  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Satoshi Yamasaki ◽  
Hideyo Okushi
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Light Emitting ◽  
Compensation Ratio ◽  
Phosphorus Doped

AbstractPhosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

scholarly journals Germanium-lead perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Dexin Yang ◽  
Guoling Zhang ◽  
Runchen Lai ◽  
Yao Cheng ◽  
Yaxiao Lian ◽  
...  
Keyword(s):  
Environmental Impact ◽  
High Performance ◽  
High Brightness ◽  
Light Emitting ◽  
Perovskite Materials ◽  
Promising Solution ◽  
Halide Perovskites ◽  
Reduced Toxicity ◽  
Photovoltaic Solar Cells ◽  
Lead Halide

AbstractReducing environmental impact is a key challenge for perovskite optoelectronics, as most high-performance devices are based on potentially toxic lead-halide perovskites. For photovoltaic solar cells, tin-lead (Sn–Pb) perovskite materials provide a promising solution for reducing toxicity. However, Sn–Pb perovskites typically exhibit low luminescence efficiencies, and are not ideal for light-emitting applications. Here we demonstrate highly luminescent germanium-lead (Ge–Pb) perovskite films with photoluminescence quantum efficiencies (PLQEs) of up to ~71%, showing a considerable relative improvement of ~34% over similarly prepared Ge-free, Pb-based perovskite films. In our initial demonstration of Ge–Pb perovskite LEDs, we achieve external quantum efficiencies (EQEs) of up to ~13.1% at high brightness (~1900 cd m−2), a step forward for reduced-toxicity perovskite LEDs. Our findings offer a new solution for developing eco-friendly light-emitting technologies based on perovskite semiconductors.

Materials Engineering For Polarized Light Emitting Diodes

1995 ◽  
Vol 413 ◽  
Author(s):  
G. Wegner ◽  
D. Neher ◽  
M. Remmers ◽  
V. Cimrova ◽  
M. Schulze
Keyword(s):  
Light Emission ◽  
Polarized Light ◽  
Defect Structures ◽  
Light Emitting ◽  
Materials Engineering ◽  
Lb Film ◽  
Device Architecture ◽  
Plane Anisotropy ◽  
Air Water Interface ◽  
Derivatives Of

ABSTRACTElectroluminescent devices have been made from organo-soluble derivatives of poly(pphenylene). Solubility and processibility by the LB-technique is achieved by attaching alkoxy side groups to the backbone-p-phenylene units. These polymers are of the hairy-rod (HR) type. If transferred as monolayers from the air-water-interface, monodomain multilayers with large order parameters of chain orientation are obtained. A 130 nm thick LB-film of poly(2,5-diisopentoxy-pphenylene) shows blue photoluminescence at λmax = 3.08 eV (404 nm) with a tail extending to 2 eV. The anisotropy was (lII- l1)/ (l11, + l11)= 0.5. This LB-film between a transparent gold and an evaporated Al-electrode shows polarized light emission at E ≤ 6.107 V cm−1 with am=a λmax2.2 eV and an in-plane anisotropy of 0.54. Thin films obtained by spincoating of the same polymer show isotropic electroluminescence between ITO and Al-electrodes with an external quantum efficiency of about 0.03 %. Higher efficiencies up to 4 % were realized optimizing the device architecture and the electrodes. Photocrosslinkable sites are introduced as side groups to the poly(pphenylene) chain. This allows patterning of the LEDs. General features of the supramolecular architecture and typical defect structures occurring in films of polyconjugated macromolecules are discussed using prototypical polymers as examples. Important effects are chain segregation according to chain length and formation of disclinations.

High Efficiency Bulk Crystalline Silicon Light Emitting Diodes

2002 ◽  
Vol 744 ◽  
Author(s):  
Jianhua Zhao ◽  
Aihua Wang ◽  
Thorsten Trupke ◽  
Martin A. Green
Keyword(s):  
Power Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Light Emitting Diode ◽  
Coupled System ◽  
High Power Conversion Efficiency ◽  
Light Emitting

ABSTRACTA high power conversion efficiency above 1% from a bulk crystalline silicon (c-Si) light-emitting diode (LED) has been demonstrated at near room temperature. These devices are based on normally weak one- and two-phonon assisted sub-bandgap light emission processes. Their improved performance results from device designs that take advantage of enhanced light absorption by a light trapping scheme which was developed for high efficiency silicon solar cells, and from reducing scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve efficiency by a factor of ten, accounting for an improvement by factor of one hundred compared to baseline devices.Also demonstrated is a greatly improved band-edge light emission and detection using bulk c-Si diodes. A bulk c-Si LED is combined with a similar diode used as a detector that collects the light emitted with a high quantum collection efficiency of 33%, to produce a silicon to silicon optically coupled system that demonstrates 0.18% coupling quantum efficiency. The crystalline silicon LED demonstrates similarly high performance at very low power levels, where it has even higher power efficiency than a high efficiency GaAlAs LED.

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