Improving the photoresponsivity and reducing the persistent photocurrent effect of visible-light ZnO/quantum-dot phototransistors via a TiO2 layer
Keyword(s):
Band Gap
◽
Conventional visible-light phototransistors based on the heterostructure of wide band gap zinc oxide (ZnO) and colloidal quantum-dots (CdSe/ZnS QDs) have been studied.
2012 ◽
Vol 111-112
◽
pp. 126-132
◽
2018 ◽
Vol 113
◽
pp. 600-607
◽