Improving the photoresponsivity and reducing the persistent photocurrent effect of visible-light ZnO/quantum-dot phototransistors via a TiO2 layer

2020 ◽  
Vol 8 (46) ◽  
pp. 16384-16391
Author(s):  
Byung Jun Kim ◽  
Sungho Park ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Jong-Am Hong ◽  
...  

Conventional visible-light phototransistors based on the heterostructure of wide band gap zinc oxide (ZnO) and colloidal quantum-dots (CdSe/ZnS QDs) have been studied.

2019 ◽  
Vol 4 (29) ◽  
pp. 8460-8469 ◽  
Author(s):  
Li Peng ◽  
Yang Xiao ◽  
Xiao‐li Wang ◽  
Da‐wei Feng ◽  
Hui Yu ◽  
...  

2019 ◽  
Vol 104 ◽  
pp. 104646 ◽  
Author(s):  
M. Loeza-Poot ◽  
R. Mis-Fernández ◽  
I. Rimmaudo ◽  
E. Camacho-Espinosa ◽  
J.L. Peña

2020 ◽  
Vol 44 (22) ◽  
pp. 9238-9247
Author(s):  
Xin Ji ◽  
Yong Guo ◽  
Shugui Hua ◽  
Huiyan Li ◽  
Sunchen Zhang

In this paper, the sensitization photodegradation of single and mixed dyes by wide band gap boron nitride (BN, 3.94 eV) under visible light irradiation has been investigated for the first time.


2018 ◽  
Vol 113 ◽  
pp. 600-607 ◽  
Author(s):  
Bhusankar Talluri ◽  
Edamana Prasad ◽  
Tiju Thomas

2019 ◽  
Vol 9 (14) ◽  
pp. 3619-3622 ◽  
Author(s):  
Shuaishuai Liu ◽  
Peng Li ◽  
Naoto Umezawa ◽  
Wei Zhou ◽  
Hideki Abe ◽  
...  

A wide band-gap photocatalyst SrNb2O6 was adjusted to response to visible light in H2 and O2 evolution due to the new electron state in its band gap created by the Sn(ii) dopant.


2014 ◽  
Vol 16 (34) ◽  
pp. 18327 ◽  
Author(s):  
Guangda Niu ◽  
Nan Li ◽  
Liduo Wang ◽  
Wenzhe Li ◽  
Yong Qiu

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