Influence of Oxygen Plasma Treatment on Structural and Spectral Changes in Silica-coated Gold Nanorods Studied Using Total Internal Reflection Microscopy and Spectroscopy

The Analyst ◽

10.1039/d1an00592h ◽

2021 ◽

Author(s):

Jaeran Lee ◽

Ji Won Ha

Keyword(s):

Plasma Treatment ◽

Gold Nanorods ◽

Localized Surface Plasmon Resonance ◽

Total Internal Reflection ◽

Oxygen Plasma ◽

Silica Shell ◽

Localized Surface Plasmon ◽

Oxygen Plasma Treatment ◽

Spectral Changes ◽

Total Internal Reflection Microscopy

This paper shows how oxygen plasma treatment affects the structural, localized surface plasmon resonance (LSPR) spectral, and spatial orientation changes in single gold nanorods coated with a mesoporous silica shell...

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Single-particle study: effects of oxygen plasma treatment on structural and spectral changes of anisotropic gold nanorods

Physical Chemistry Chemical Physics ◽

10.1039/d0cp00996b ◽

2020 ◽

Vol 22 (21) ◽

pp. 11767-11770

Author(s):

Geun Wan Kim ◽

Ji Won Ha

Keyword(s):

Plasma Treatment ◽

Gold Nanorods ◽

Single Particle ◽

Oxygen Plasma ◽

Treatment Time ◽

Oxygen Plasma Treatment ◽

Spectral Changes ◽

Plasma Treatment Time

Increasing the oxygen plasma treatment time gradually broadened the LSPR linewidth of the single gold nanorods.

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Gold Nanorods for LSPR Biosensing: Synthesis, Coating by Silica, and Bioanalytical Applications

Biosensors ◽

10.3390/bios10100146 ◽

2020 ◽

Vol 10 (10) ◽

pp. 146

Author(s):

Vincent Pellas ◽

David Hu ◽

Yacine Mazouzi ◽

Yoan Mimoun ◽

Juliette Blanchard ◽

...

Keyword(s):

Gold Nanorods ◽

Localized Surface Plasmon Resonance ◽

Silica Shell ◽

Localized Surface Plasmon ◽

Spherical Nanoparticles ◽

Coinage Metals ◽

Spherical Gold Nanoparticles ◽

Bioanalytical Applications ◽

Blue Range ◽

Set Up

Nanoparticles made of coinage metals are well known to display unique optical properties stemming from the localized surface plasmon resonance (LSPR) phenomenon, allowing their use as transducers in various biosensing configurations. While most of the reports initially dealt with spherical gold nanoparticles owing to their ease of synthesis, the interest in gold nanorods (AuNR) as plasmonic biosensors is rising steadily. These anisotropic nanoparticles exhibit, on top of the LSPR band in the blue range common with spherical nanoparticles, a longitudinal LSPR band, in all respects superior, and in particular in terms of sensitivity to the surrounding media and LSPR-biosensing. However, AuNRs synthesis and their further functionalization are less straightforward and require thorough processing. In this paper, we intend to give an up-to-date overview of gold nanorods in LSPR biosensing, starting from a critical review of the recent findings on AuNR synthesis and the main challenges related to it. We further highlight the various strategies set up to coat AuNR with a silica shell of controlled thickness and porosity compatible with LSPR-biosensing. Then, we provide a survey of the methods employed to attach various bioreceptors to AuNR. Finally, the most representative examples of AuNR-based LSPR biosensors are reviewed with a focus put on their analytical performances.

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High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1535 ◽

2013 ◽

Vol 347-350 ◽

pp. 1535-1539

Author(s):

Jian Jun Zhou ◽

Liang Li ◽

Hai Yan Lu ◽

Ceng Kong ◽

Yue Chan Kong ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Oxygen Plasma ◽

Cutoff Frequency ◽

Chemical Vapor ◽

Current Gain ◽

Organic Chemical ◽

Oxygen Plasma Treatment ◽

Gan Hemt ◽

High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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